Improved Performance and Sufficient Reliability In&lt;sub&gt;0.53&lt;/sub&gt;Ga&lt;sub&gt;0.47&lt;/sub&gt;As FinFET Using NH3 Plasma Treatment

Yang, Kai-Wei; Chang, Chun-Hung; Lin, J.W.; Chiang, Cheng-Ling; Binh, Huy; Ha, Min-Woo; Huynh, Sharon; Jin, Y.; Nguyen, Tien Anh; Lin, Yen-Yi; Chang, Edward Yi

doi:10.7567/ssdm.2017.e-1-05

Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials 2017

DOI: 10.7567/ssdm.2017.e-1-05

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Improved Performance and Sufficient Reliability In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFET Using NH3 Plasma Treatment

Kai-Wei Yang¹,

Chun-Hung Chang²,

J.W. Lin³

et al.

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Improved Performance and Sufficient Reliability In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFET Using NH3 Plasma Treatment

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