Improved p–n heterojunction device performance induced by irradiation in amorphous boron carbide films

Peterson, George; Su, Qing; Wang, Yongqiang; Dowben, Peter A.; Nastasi, M.

doi:10.1016/j.mseb.2015.09.002

Cited by 13 publications

(9 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ultimate goal is an efficient, compact, low power detector relatively unaffected by terrestrial temperature changes. As an example, icosahedral semiconducting boron carbides [2][3][4][5][6] have recently garnered interest because they meet many of the operational requirements, but they still need significant neutron moderation to be efficient in detecting neutrons from fissile materials.…”

Section: Introductionmentioning

confidence: 99%

Electrical and material properties of hydrothermally grown single crystal (111) UO2

et al. 2018

Self Cite

View full text Add to dashboard Cite

The semiconductor and optical properties of UO2 are investigated. The very long drift carrier lifetimes, obtained from current-voltage I(V) and capacitance-voltage C(V) measurements, along with the well-defined optical properties provide little evidence of an abundance of material defects away from the surface region. Schottky barrier formation may be possible, but very much dependent on the choice of contact and surface stoichiometry and we find that Ohmic contacts are in fact favored. Depth resolved photoemission provided evidence of a chemical shift at the surface. Density functional theory, with the Heyd-Scuseria-Ernzerhof (HSE) functional, indicates a band gap of a 2.19 eV and an anti-ferromagnetic ground state. Ellipsometry measurements indicates at UO2 is relatively isotropic with a band gap of approximately 2.0 eV band gap, consistent with theoretical expectations.

show abstract

Section: Introductionmentioning

confidence: 99%

Electrical and material properties of hydrothermally grown single crystal (111) UO2

et al. 2018

Self Cite

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6][7][8][9][10][11][12][13] Recent work has shown that neutron detectors and neutron voltaic devices, based on semiconducting boron carbides, may improve with some radiation exposure and are robust against radiation induced device degradation and failure. 14 The main causes for the poor neutron detection device performance are as follows: the insufficiently thick depletion region of the device, the need for a thicker device to come closer to neutron opacity, 1 and the need for better charge collection while maintaining low reverse bias leakage currents. Improvements in both charge collection and reverse bias leakage currents have been seen in plasma-enhanced chemical vapor (PECVD) semiconducting boron carbide based on composites (3:1) of pyridine and orthocarborane and attributed to the increase in hole carrier lifetimes to $350 ls compared to values of 35 ls for the PECVD semiconducting boron carbide films fabricated without pyridine.…”

Section: Introductionmentioning

confidence: 99%

Increased drift carrier lifetime in semiconducting boron carbides deposited by plasma enhanced chemical vapor deposition from carboranes and benzene

Peterson

Echeverría

Dong

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

View full text Add to dashboard Cite

Plasma-enhanced chemical vapor (PECVD) codeposition of benzene and 1,2-dicarbadodecaborane, 1,2-B10C2H12 (orthocarborane) and benzene, 1,7 dicarbadodecaborane, and 1,7-B10C2H12 (metacarborane) results in semiconducting boron carbide composite films with significantly longer drift carrier lifetimes than plasma-enhanced chemical vapor deposited semiconducting boron carbide synthesized from orthocarborane or metacarborane alone. Capacitance versus voltage C(V) and current versus voltage I(V) measurements indicate the hole carrier lifetimes for PECVD benzene/orthocarborane based semiconducting boron carbide composites increase to 2.5 ms from values of ≤35 μs for the PECVD semiconducting boron carbide films fabricated without benzene. For PECVD benzene/metacarborane based semiconducting boron carbide composites, there is an increase in the hole carrier lifetime to roughly 300 ns from values of 50 ns for those films fabricated without benzene.

show abstract

“…In this regard, many works have been done and the results of which are regularly published in periodical scientific and scientific and technical journals. A large number of works are devoted to improve the technology of manufacturing solar cells (SC), a number of works notify about the introduced impurities in the structure of the initial materials [1] [2] [3] [4], and there are certain positive results on combining solar cells with thermoelectric converters (TEC) [5] [6]. In addition, there are many publications on the creation of heterojunction and cascade (SC)s; it is impossible to enumerate everything.…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient Conversion of Solar Energy by the Photoelectric Converter and a Thermoelectric Converter

Kasimakhunova¹,

Olimov²,

Nurdinova³

et al. 2018

JAMP

View full text Add to dashboard Cite

The analysis of the principle operation of the solar element is given in the work. The efficiency of the creation of combined high-efficiency converters of network energy in electric and thermal is indicated. A method for creating a combined photo thermo converter with a high value of the efficiency of a solar element has been found. A method for separating light from optical lenses is shown. The calculation of the light intensity into diffraction pattern is calculated using the Huygens-Fresnel principle. A new design of a highly efficient combined light-thermal converter into an electrical, with a solar element, operating on selective photoactive radiation is presented. The process of conversion of non-active radiation into electrical radiation by means of a thermo electronic converter is described. The ways of the solution of the problem connected with the reduction of the coefficient of its full effect as a function of temperature and characteristics are indicated.

show abstract

Improved p–n heterojunction device performance induced by irradiation in amorphous boron carbide films

Abstract: Amorphous hydrogenated boron carbide films (a-B 10 C 2+x :H y) on Si p-n heterojunctions were fabricated utilizing plasma enhanced chemical vapor deposition (PECVD). These

Cited by 13 publications

References 41 publications

Electrical and material properties of hydrothermally grown single crystal (111) UO2

Electrical and material properties of hydrothermally grown single crystal (111) UO2

Increased drift carrier lifetime in semiconducting boron carbides deposited by plasma enhanced chemical vapor deposition from carboranes and benzene

Highly Efficient Conversion of Solar Energy by the Photoelectric Converter and a Thermoelectric Converter

Contact Info

Product

Resources

About