Improved optical and structural properties of ZnO thin films by rapid thermal annealing

Lee, Yueh-Chien; Hu, Sheng-Yao; Water, Willem van de; Huang, Y. S.; Yang, Miin-Shen; Shen, Ji‐Lin; Tiong, K. K.; Huang, Chia‐Chien

doi:10.1016/j.ssc.2007.05.021

Cited by 65 publications

(25 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The high intensity of E 1 low (585 cm -1 ) peak of films a and b deposited at lower oxygen pressure shows large oxygen deficiency when compared to film c deposited at higher oxygen pressure. As the size of the nanostructures is larger by an order higher than the required size for quantum confinement effect, the shift recorded in these films (compared to bulk) may be due to other stress-related effects (Lee et al 2007).…”

Section: Raman and Photoluminescence Studiesmentioning

confidence: 98%

Deposition of ZnO nanostructured film at room temperature on glass substrates by activated reactive evaporation

2013

View full text Add to dashboard Cite

ZnO nanostructured films were deposited on glass substrates at room temperature by activated reactive evaporation technique. Thermal evaporation of zinc at high deposition rate in presence of oxygen plasma resulted in deposition of ZnO nanostructured film with different flower-like morphologies on glass substrates. The structural and morphological properties of these nanostructured films were studied by XRD, SEM and TEM. A gas phase growth mechanism has been proposed for the formation of nanostructures. The room temperature photoluminescence spectra of these films exhibited weak ultraviolet (UV) and strong broad visible emission peaks. Further, the position of visible emission peak is found to vary with morphology of the grown nanostructured films. Photocurrent measurements indicated that these ZnO nanostructured films show high sensitivity to UV light, and hence can be used as efficient UV photodetectors.

show abstract

Section: Raman and Photoluminescence Studiesmentioning

confidence: 98%

Deposition of ZnO nanostructured film at room temperature on glass substrates by activated reactive evaporation

2013

View full text Add to dashboard Cite

show abstract

“…RTA has several advantages such as low thermal budget, short processing time and less chance of dopant distribution [13]. Although few researchers have attempted to conduct postdeposition RTA process of ZnO thin films [13][14][15][16], a systematic study on the effect of RTA temperature, annealing time and oxygen flow rate on the physical properties of sputtered ZnO films has not yet been completely explored. In this work, the influence of RTA temperature, annealing time and oxygen flow rate on the microstructural and optical properties of RF sputtered ZnO films are systematically investigated and correlated.…”

Section: Introductionmentioning

confidence: 99%

Microstructural evolution of sputtered ZnO thin films with rapid thermal annealing

Ghosh

Das

Tripathy

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Zinc oxide thin films were deposited on silicon substrates by reactive RF magnetron sputtering technique. Post-deposition rapid thermal annealing of the sputtered thin films was carried out by varying temperatures, annealing duration and oxygen flow rate. The films, annealed at 1000°C for 150 s in air ambient, have shown highest degree of crystallinity. The surface of the ZnO films, annealed for longer period, was greatly modulated with the evolution of porous surface. The films annealed in oxygen ambient have shown smoother morphology with the reduction in surface roughness. The characteristic absorption band of Zn-O became prominent due to the increase in Zn-O bond density during rapid thermal annealing process. A significant reduction of the deep level emission in the photoluminescence spectra was observed for annealed samples, whereas the near band edge ultraviolet emission was suppressed for the films annealed in oxygen ambient due to the oxygen adsorption at the film surface.

show abstract

“…The electrical properties (849) of nanostructured materials are generally inuenced by the high surface-to-volume ratio of grains, small size, enhanced contribution from grains and grain boundaries, quantum connement of charge carriers, band structure modication and defects in grains [30]. ZnO thin lms were synthesized by rf magnetron sputtering associated with the rapid thermal annealing in the environment of nitrogen or oxygen ambient, and the obtained information demonstrated that rapid thermal annealing at high temperature has signicant eect on the compressive stress and crystal quality [31]. To the best of our knowledge, studies concerning the inuence of post growth annealed (PGA) (500 • C, 1 min) process of ZnO/CuO heterojunction prepared by using ACG method are still lacking.…”

Section: Introductionmentioning

confidence: 99%

Effect of Post Growth Annealing on the Structural and Electrical Properties of ZnO/CuO Composite Nanostructures

et al. 2014

View full text Add to dashboard Cite

In the present work, ZnO/CuO composite nanostructures have been grown on uorine doped tin oxide coated glass substrate by aqueous chemical growth method. To observe the eect of post growth annealing (500 • C, 1 min) on the structural properties of ZnO nanorods scanning electron microscope and X-ray diraction techniques have been utilized. SEM images of post growth annealed (post growth annealed) sample reveal that the average diameter of ZnO NRs has considerably increased in comparison with as grown sample. Moreover after post growth annealing the ZnO NRs showed more clearly hexagonal wurtzite structure. Beside this the NRs are also uniform and well aligned with a high aspect ratio of ∼10. In XRD pattern the strongly intense (002) peak of the post growth annealing sample suggest that the crystal quality of the NRs have also been improved signicantly. Since the structural improvement have a signicant impact on charge transport properties as well, therefore the eect of post growth annealed has also been investigated by the electrical characterization of ZnO/CuO based heterojunction. The current-voltage measurements of the post growth annealed sample showed improvement in the current in comparison with as grown sample. The impedance study has also conrmed that the post growth annealed has inuence on the electrical properties. The presented post growth annealed heterojunction of ZnO/CuO may have space in applications like sensors and oxide based diodes in the devices fabrication.

show abstract

Improved optical and structural properties of ZnO thin films by rapid thermal annealing

Cited by 65 publications

References 28 publications

Deposition of ZnO nanostructured film at room temperature on glass substrates by activated reactive evaporation

Deposition of ZnO nanostructured film at room temperature on glass substrates by activated reactive evaporation

Microstructural evolution of sputtered ZnO thin films with rapid thermal annealing

Effect of Post Growth Annealing on the Structural and Electrical Properties of ZnO/CuO Composite Nanostructures

Contact Info

Product

Resources

About