Improved Off-State Reliability of Nonvolatile Resistive Switch With Low Programming Voltage

Tada, Munehiro; Sakamoto, Toshitsugu; Miyamura, Miharu; Banno, Naoki; Okamoto, K.; Iguchi, N.; Hada, H.

doi:10.1109/ted.2012.2204263

Cited by 31 publications

(27 citation statements)

References 17 publications

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“…The two terminal device is simple and small footprint, but the high programming voltage more than 3V is needed for the switch application to secure the off-state lifetime under the logic operation voltage of V dd =1.0V. Complementary Atom Switch (CAS) To solve the aforementioned tradeoff relationship, complementary Atom switch (CAS) is proposed [6]. Figure 5 shows a schematic of CAS.…”

Section: Resultsmentioning

confidence: 99%

“…The two-terminal device is very simple and good for a high density memory, but inferior to the OFF-state reliability, especially for the routing switch application since the logic operation voltage (V dd ) is applied to the OFF-state atom switch more than ten years in the worst case. For the reliability challenge, the complementary atom switch (CAS) [5,6] is developed to secure the OFF-state lifetime. The pair of the switches works as one element to transfer signals, in which the tradeoff relationship between low programming voltage and high off-state reliability are solved.…”

Section: Introductionmentioning

confidence: 99%

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(Invited) Atom Switch Technology for Low-Power Nonvolatile Logic Application

et al. 2014

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This paper reports Atom switch technology featuring Cu nanometer-scale conducting bridge in a solid-electrolyte. The switch exhibits resistance-switching, which is originated from Cu electrolysis through the solid-electrolyte. Three types of device structure of Atom switches such as two-terminal device, CAS and DCAS are reviewed with the object of the routing switch application to directly replace the conventional CMOS switch element, realizing the low-power, nonvolatile programmable logic.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

(Invited) Atom Switch Technology for Low-Power Nonvolatile Logic Application

et al. 2014

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“…For reliability challenge, a complementary atom switch (CAS) [5,6] and alloying electrode [7] are proposed. The pair of the switches works as one…”

Section: Introductionmentioning

confidence: 99%

“…(a) shows the schematic image of time to on-state of atom switch as a function of voltage, (b) a schematic of complementary atom switch, where the CAS programmed to be on-or off-states is depicted [-V characteristics of the CAS, (a) I T1C and I T2C during an off-to-on programming, (b) I CT1 and I CT2 during an on-to-off programming, and (c) I T2T1 -V T2T1 read operation characteristics in both of the on-and off-states[5].…”

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(Invited) Opportunities and Challenges of Atom Switch for Low-Power Programmable Logic

Tada¹,

Sakamoto²,

Hada³

2013

ECS Trans.

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Opportunities and challenges of atom switch featuring Cu nanometer-scale conducting bridge in the solid-electrolyte are discussed with comparing the other emerging memories. Atom switch having the high on/off conductance ratio is suitable to directly replace the conventional CMOS switch element, realizing the low-power, nonvolatile programmable logic. Reliability challenges of the atom switch are also discussed in the view point of the stabilization of the on-and off-states. IntroductionWith the increasing requirement of tasks and functions in digital circuit, flexibility and energy-efficiency play important roles in addressing future low-power computing systems. A flexible hard wired-logic such as a field-programmable gate array (FPGA) becomes of great interest as an accelerator for the low-power systems since no redundant hardware, namely no instruction fetch mechanisms and cache, is advantageous to shift critical code from CPU to the accelerator and run those algorithms using multiple streaming processes. However, the FPGA with the large area suffers from large parasitic resistance and capacitance, limiting power/performance improvement.One solution for overcoming the issues of conventional FPGAs is a replacement of the CMOS switch element composed of SRAM and transmission gate (TMG) to a compact resistive-change switch [1]. Figure 1 shows the schematic image of the operation principle of atom switch. The solid-electrolyte is sandwiched between the active (Cu) anode and the inert cathode (Ru). When a positive voltage is applied to the Cu electrode, a nanometer-scale conducting Cu-bridge is formed and the switch is turned on. Cu + ions are supplied via electrolysis from the solid-electrolyte/Cu interface. A positive voltage applied to the inert electrode annihilates the Cu bridge and turns the switch off. Figure 2 (a) shows a tradeoff relationship between on/off ratio and endurance in emerging nonvolatile memories. Figure 2 (b) shows a concept of a crossbar switch integrated in BEOL [2, 3], where the atom switches are densely-packed and directly route signals flexibly. The replacement of the switch block reduces the chip area, lowering dynamic power consumption. The nonvolatility also decreases the static power since an efficient tuning of power-gating can be realized. For the switch application, atom switch having the high on/off conductance ratio is more suitable than the other memories. In the previous work, the 70 % dynamic power and 72 % area reductions were demonstrated in a 90 nm-node, test-vehicle [4]. In reality, once the FPGA is programmed, the configuration is not so much frequently re-programmed. Therefore, the >10 3 endurance of atom switch is acceptable for the programmable logic application so far.In this paper, an operation principle of the atom switch is reviewed and the application is discussed. For reliability challenge, a complementary atom switch (CAS) [5,6] and alloying electrode [7] are proposed. The pair of the switches works as one

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