Improved near infrared energy harvesting through heterogeneously coupled SK on SML quantum dot heterostructure

Das, Debabrata; Panda, Debiprasad; Tongbram, Binita; Saha, Jhuma; Rawool, Harshal; Singh, Sukhwinder; Chavan, Vinayak

doi:10.1016/j.solmat.2018.05.053

Cited by 30 publications

(3 citation statements)

References 15 publications

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“…PL spectroscopy reveals the recombination dynamics of photogenerated carriers. [42][43][44][45] Depending on the trap-state density and thermodynamically favorable transitions, the PL peak position and spectrum intensity are modulated according to the optimized growth conditions. Such characterization plays an essential role while tailoring and optimizing the material synthesis for photonic and optoelectronic applications.…”

Section: Resultsmentioning

confidence: 99%

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Das

Sanchez

Barton

et al. 2023

Adv Materials Technologies

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With the astonishing advancement of present technology and increasing energy consumption, there is an ever‐increasing demand for energy‐efficient multifunctional sensors or transducers based on low‐cost, eco‐friendly material systems. In this context, self‐assembled vertically aligned β‐Ga2−xWxO3 nanocomposite (GWO‐VAN) architecture‐assisted self‐biased solar‐blind UV photodetection on a silicon platform, which is the heart of traditional electronics is presented. Utilizing precisely controlled growth parameters, the formation of W‐enriched vertical β‐Ga2−xWxO3 nanocolumns embedded into the W‐deficient β‐Ga2−xWxO3 matrix is reached. Detailed structural and morphological analyses evidently confirm the presence of β‐Ga2−xWxO3 nanocomposite with a high structural and chemical quality. Furthermore, absorption and photoluminescence spectroscopy explains photo‐absorption dynamics and the recombination through possible donor–acceptor energy states. The proposed GWO‐VAN framework facilitates evenly dispersed nanoregions with asymmetric donor energy state distribution and thus forms build‐in potential at the vertical β‐Ga2−xWxO3 interfaces. As a result, the overall heterostructure evinces photovoltaic nature under the UV irradiation. A responsivity of ≈30 A/W is observed with an ultrafast response time (≈350 µs) under transient triggering conditions. Corresponding detectivity and external quantum efficiency are 7.9 × 1012 Jones and 1.4 × 104%, respectively. It is believed that, while this is the first report exploiting GWO‐VAN architecture to manifest self‐biased solar‐blind UV photodetection, the implication of the approach is enormous in designing electronics for extreme environment functionality and has immense potential to demonstrate drastic improvement in low‐cost UV photodetector technology.

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Section: Resultsmentioning

confidence: 99%

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Das

Sanchez

Barton

et al. 2023

Adv Materials Technologies

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“…The fundamental limitations of single-junction solar cells result in a maximum conversion efficiency of approximately 33% at 1-sun illumination condition as calculated by the Shockley–Queisser detailed balance model, which considers a single material parameter (the bandgap of the absorber) and the incoming and outgoing photon fluxes [ 1 ]. This limitation can be circumvented through various approaches, such as incorporating quantum dot (QD) layers into a host absorbing material to establish an intermediate band structure [ 2 , 3 ]. The output current of such an intermediate-band solar cell can be larger than that of a conventional solar cell due to the use of two-step photon absorption processes.…”

Section: Introductionmentioning

confidence: 99%

External-quantum-efficiency enhancement in quantum-dot solar cells with a Fabry–Perot light-trapping structure

Oteki,

Okada

2023

Heliyon

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“…Quantum layers (QLs), like epitaxially-grown quantum wells (QWs) and quantum dots (QDs), are broadly used in opto-electronic devices such as lasers, photodetectors and solar cells [1][2][3] . For photovoltaics, they are investigated to extend the absorption edge of a given material and improve current matching in multi-junction solar cells 4 , as well as for high-effiency concepts like intermediate-band 5,6 , multiexciton generation 3,7 and hot-carrier solar cells 8,9 . Strong light absorption is critical for the performance of photodetectors and solar cells.…”

Section: Introductionmentioning

confidence: 99%

Resonant absorption in multilayer quantum-well and quantum-dot solar cells

Giteau¹,

Oteki²,

Kitahara³

et al. 2021

Preprint

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Quantum wells and quantum dots have weak light absorption, making resonant light trapping particularly relevant for devices with such quantum layers. Compared to homogeneous media, the position of the quantum layers within the device is an extra parameter that can strongly influence their absorption. However, this effect has so far received little attention. In this work, we develop a theoretical framework to evaluate and optimize resonant light absorption in a thin slab with multiple quantum layers. Using numerical simulations, we show that the position of the layers can make the difference between absorption enhancement and completely suppressed absorption. Furthermore, we demonstrate that placing the layers at the intensity peaks of a resonance leads to an absorption enhancement twice higher than in a homogeneous material. These results are confirmed experimentally by analyzing photoluminescence spectra from GaAs samples with multiple InAs quantum dot layers. Overall, this work offers an opportunity to improve the efficiency of devices implementing quantum wells and quantum dots, like photodetectors and high-efficiency solar cells.

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Improved near infrared energy harvesting through heterogeneously coupled SK on SML quantum dot heterostructure

Cited by 30 publications

References 15 publications

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

External-quantum-efficiency enhancement in quantum-dot solar cells with a Fabry–Perot light-trapping structure

Resonant absorption in multilayer quantum-well and quantum-dot solar cells

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Improved near infrared energy harvesting through heterogeneously coupled SK on SML quantum dot heterostructure

Cited by 30 publications

References 15 publications

Rationally Engineered Vertically Aligned β‐Ga2−xWxO3 Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Rationally Engineered Vertically Aligned β‐Ga2−xWxO3 Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

External-quantum-efficiency enhancement in quantum-dot solar cells with a Fabry–Perot light-trapping structure

Resonant absorption in multilayer quantum-well and quantum-dot solar cells

Contact Info

Product

Resources

About

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response