Improved multi-layer glass-bonded QPM GaAs crystals for non-linear wavelength conversion into the mid-infrared

Mason, Paul; McBrearty, Euan; Webber, P. J.; Perrett, Brian J.; Wedd, Martin R.; Orchard, David A.

doi:10.1117/12.633521

Cited by 3 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The glass bonding process for manufacturing QPM non-linear crystals has been described in detail in previous publications [3,4] and is summarised here. The coherence length for first-order parametric processes in GaAs pumped at 2.1 µm is approximately 33 µm.…”

Section: Glass Bonding Techniquementioning

confidence: 99%

“…Fresnel reflection losses at each wafer interface are minimised by using a quaternary chalcogenide glass Ge 15 As 15 Se 17 Te 53 (GAST) that has a refractive index closely matched to that of GaAs [6] (n GaAs = 3.33 at 2.1 P For efficient wavelength conversion the glass-bonded QPM GaAs (GBGaAs) stack must have low optical loss at the wavelengths of interest, a sufficiently large useable aperture, to handle high power pump beams, and have at least 50 layers. We have previously reported development of the glass-bonding process to ensure minimal optical loss and its application to manufacturing GBGaAs stacks with up to 50 layers, made from ~300 µm thick GaAs wafers [4] . Here we report optical parametric amplification in the mid-IR using multi-layer GBGaAs crystals constructed from ~100 µm GaAs wafers.…”

Section: Introductionmentioning

confidence: 99%

“…However, whilst ZGP can be grown with good optical transmission at 2 µm it is not readily available. Consequently, a new non-linear optical material engineered specifically for use in the mid-IR is being developed [3,4] based upon commercially available single crystal gallium arsenide (GaAs).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical parametric amplification of mid-infrared radiation using multi-layer glass-bonded QPM GaAs crystals

Perrett

Mason

Webber

et al. 2007

Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VI

Self Cite

View full text Add to dashboard Cite

Non-linear optical wavelength conversion of near-infrared lasers within optical parametric oscillators (OPOs) offers a route to powerful tunable sources in the mid-infrared (mid-IR). Engineered quasi-phasematched (QPM) non-linear optical materials based on gallium arsenide (GaAs) offer an alternative to conventional birefringently phasematched single-crystal materials such as ZnGeP 2 , which are currently used in mid-IR OPOs. QPM GaAs crystals have been assembled from commercially available, high-optical quality 100-micron thickness gallium arsenide (GaAs) wafers using a novel glass-bonding (GB) process. This uses thin layers of an infrared transmitting glass (refractive index matched to GaAs) deposited onto each GaAs wafer, which, when heated under pressure, fuse the wafers together to form a monolithic structure. By varying the thickness of the deposited glass layers, the dispersion in the glass can be used to compensate for variations in GaAs wafer thickness and to fine tune the phasematching wavelengths of the QPM crystal. GBGaAs crystals with up to 100 layers have been designed and built for wavelength conversion from 2 µm into the mid-IR. We report the performance of these crystals used as optical parametric amplifiers (OPAs) in the mid-IR, when pumped by a 2.094 µm source, and compare these results to measurements for a ZGP OPA. In addition, the dependence of conversion within GBGaAs crystals on the polarisation state of the amplifier seed beam has been investigated along with the temperature dependence of the optimum operating wavelength. Good agreement between experimental results and performance predictions obtained from a numerical model is observed.

show abstract

Section: Glass Bonding Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%