Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically-smooth heterointerface

Hosomi, Daiki

doi:10.7567/ssdm.2017.n-2-03

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2018

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“…26) Recently, we have therefore studied on the improvement in the 2DEG mobility for InAlN=AlGaN heterostructures by achieving an atomically smooth hetero-interface. 28) This paper presents our most recent research focusing on the material growth process and their microstructure analyses.…”

Section: Introductionmentioning

confidence: 99%

Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface

Hosomi

Miyachi

Egawa

et al. 2018

Jpn. J. Appl. Phys.

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An InAlN/AlGaN two-dimensional electron gas (2DEG) heterostructure with an "regrown AlN initial layer" was grown on AlN/sapphire template by metalorganic chemical vapor deposition, and their structural and electrical properties were investigated. It was confirmed that the prepared sample had an atomically-smooth heterointerface and exhibited an improved 2DEG mobility of 242 cm 2 /Vs compared to the sample without the regrown AlN layer.

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Section: Introductionmentioning

confidence: 99%