Improved luminescence from quantum-dot nanostructures embedded in structurally engineered (In,Ga)As confining layers

Bound to continuum intersubband transition optical properties in the strain reducing layer-assisted InAs quantum dot structure

“…In these elements, WL state envelope function location is of a great importance. (14) ( 15) In the first segment, for the interval between 2 to 10 nm, the thicker WL , 2 and 3 nm, causes WL state expanded more widely in the WL and somehow around it; while at WL=1 nm this distribution squeezed mainly in the dot region (similar to GS envelope function). Hence, the elements of M 22 and M 21 matrixes has larger value at thinner WL and SRL well structure doesn't impose any changes on the structure with thinner WL of 1 nm, as well.…”

“…We observe that with the presence of the SRL, the magnitude of the OR coefficient is increased and the resonant peaks of this quantity is shifted to the lower energy regions. According to equation (15) OR coefficient is proportional to the absolute value of difference of M 11 Fig.17. This figure shows that the maximum value of this quantity for the cases with SRL at height lower than 9 nm for WL = 1 and 2 nm is larger than those of without this well structure.…”

“…A recent more efficient method is growing the dots within a strain-reducing layer (SRL) quantum well of InGaAs, InAlAs or GaAsSb to form a so-called quantum dots-in-awell (DWELL) structure [12,13]. The overgrowth of QDs by SRL provides an improved InAs QDs density, better carrier confinement ability and therefore enhanced optical intensity [14][15][16].…”

Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition

“…Next possible method to improve QW FWHM and to simultaneously reduce significant QW blueshift lies in embedding the quaternary structure inside thin graded InGaAs layers. 28 This scheme would lower lattice mismatch between the binary GaAs barriers and the quaternary GaInAsSb QW and could lead to similar effects as described above. Another suggesting idea lies in combining the two above in form of graded GaAsSb layer.…”

Role of aluminum oxide cladding layers in heat transfer in a semiconductor slab with photonic crystal

“…Although it is difficult to inject carriers into a cavity resonator built in a photonic crystal, there have been several attempts to fabricate a device in which current injection into the cavity resonator is possible. [3][4][5][6][7][8][9][10][11] We also proposed a structure of a photonic crystal laser diode in which AlAs cladding layers are partially oxidized into AlO x . [12][13][14] As a result of the partial oxidation, the diode has AlO x cladding layers and funnels of AlAs remaining unoxidized only at the cavity resonator, as illustrated in Fig.…”