Improved luminance of moving picture in field emission display operating with microchannel plate

Yi, Whikun; Yu, Syoung Gon; Lee, J.H.; Jin, Sunghwan; Jeong, Tae Won; Heo, Jungna; Kim, J.M.; Lee, N.S.; Kim, J.W.; Jang, Jiho; Lee, H.W.; Choi, Jinsung; Park, Y.J.; Jung, Jong-Jin

doi:10.1049/el:20010613

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2004

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“…The preparation and optimization of the characteristics of low voltage phosphors for FED has attracted attention. [4][5][6] For low voltage FED, the requirement of phosphor is that the phosphor should have low resistivity at an operating voltage. High resistance of the phosphor surface generates more secondary electrons than incident electrons, leading to electrical charging of the phosphor surface.…”

Section: Introductionmentioning

confidence: 99%

Indium- and tungsten-doped ZnGa2O4 phosphor

Yang

2004

Journal of Elec Materi

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This paper describes the optical characteristics of indium-and tungsten-doped ZnGa 2 O 4 phosphor for field emission display (FED). The solid-state reaction is used to synthesize the phosphor powder, and the phosphor film is prepared by electrophoresis. Indium doping enhances the luminescence of ZnGa 2 O 4 phosphor; nevertheless, the emission of phosphor doped by tungsten shifts to the short wavelength region. From the measurement of the cathodoluminescence (CL), it reveals that the luminescence of the phosphor film is improved when it is annealed in an O 2 /Ar atmosphere. A luminance of 2,080 cd/m 2 is obtained as the phosphor film is excited at an electron voltage of 5 kV and an anode current of 30 µA.

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Section: Introductionmentioning

confidence: 99%

Indium- and tungsten-doped ZnGa2O4 phosphor

Yang

2004

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

Improved luminance of moving picture in field emission display operating with microchannel plate

Cited by 1 publication

References 2 publications

Indium- and tungsten-doped ZnGa2O4 phosphor

Indium- and tungsten-doped ZnGa2O4 phosphor

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