2005
DOI: 10.1088/0253-6102/43/3/032
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Improved Ligand-Field Theory with Effect of Electron-Phonon Interaction

Abstract: Traditional ligand-field theory has to be improved by taking into account both "pure electronic" contribution and electron-phonon interaction one (including lattice-vibrational relaxation energy). By means of improved ligand-field theory, R1, R2, R 3 , R 2 , and R 1 lines, U band, ground-state zero-field-splitting (GSZFS), and ground-state g factors of ruby and/or GSGG: Cr 3+ as well as thermal shifts of GSZFS, R1 line and R2 line of ruby have been calculated. The results are in very good agreement with the ex… Show more

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Cited by 19 publications
(89 citation statements)
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References 34 publications
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“…Table I summarizes the calculated E g of materials ranging from simple semiconductors and insulators to transition-metal oxide ZnO and molecular solid noble gas Ne. Compared with experimental data corrected by excluding the electron-phonon interactions, 41 which normally lead to a reduced band gap, [42][43][44][45][46] E g in AlN, GaAs, ZnO, and Ne have relatively large errors, requiring self-consistent GW computations 19,20 and/or more accurate DFT wave functions to construct G and W . 37,[47][48][49][50] Here we focus on the effects of the PPM on band structures, and our calculations suggest that for Si, Ge, and GaAs all four PPMs give very close E g values (within 0.1 eV) to those from numerical integration.…”
Section: Resultsmentioning
confidence: 99%
“…Table I summarizes the calculated E g of materials ranging from simple semiconductors and insulators to transition-metal oxide ZnO and molecular solid noble gas Ne. Compared with experimental data corrected by excluding the electron-phonon interactions, 41 which normally lead to a reduced band gap, [42][43][44][45][46] E g in AlN, GaAs, ZnO, and Ne have relatively large errors, requiring self-consistent GW computations 19,20 and/or more accurate DFT wave functions to construct G and W . 37,[47][48][49][50] Here we focus on the effects of the PPM on band structures, and our calculations suggest that for Si, Ge, and GaAs all four PPMs give very close E g values (within 0.1 eV) to those from numerical integration.…”
Section: Resultsmentioning
confidence: 99%
“…According to the theory of PS of en-ergy spectra (e.g., see Refs. [2] and [5] and therein cited references), the expressions of B, C (Racah parameters), Dq (cubic-field parameter), ζ, and ζ (spin-orbit coupling parameters) as functions of χ (χ = R/R 0 , where R 0 and R are the local interionic distances around Cr 3+ at normal pressure and pressure P , respectively) are given as follows:…”
Section: Calculation Of R-line Ps Without Epimentioning
confidence: 99%
“…According to Refs. [3] and [4], the temperatureindependent contribution to i-state energy of the total system (i.e., the interaction system between localized delectronic states of a transition-metal ion and phonons of the lattice vibration) from EPI due to acoustic branches (i.e., the acoustic-branch term of i level in cm −1 unit) is…”
Section: Calculation Of Contributions To Ps Of R-line From Epimentioning
confidence: 99%
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