“…Table I summarizes the calculated E g of materials ranging from simple semiconductors and insulators to transition-metal oxide ZnO and molecular solid noble gas Ne. Compared with experimental data corrected by excluding the electron-phonon interactions, 41 which normally lead to a reduced band gap, [42][43][44][45][46] E g in AlN, GaAs, ZnO, and Ne have relatively large errors, requiring self-consistent GW computations 19,20 and/or more accurate DFT wave functions to construct G and W . 37,[47][48][49][50] Here we focus on the effects of the PPM on band structures, and our calculations suggest that for Si, Ge, and GaAs all four PPMs give very close E g values (within 0.1 eV) to those from numerical integration.…”