Improved humidity sensing performances of boron doped ZnO nanostructured thin films depending on boron concentration

Abstract

This study details the production and analysis of undoped zinc oxide (uZnO) and boron (B) doped zinc oxide nanostructured thin films, with a specific focus on assessing the influence of varying B doping concentrations on humidity sensing performance. The synthesis of undoped ZnO and B doped ZnO nanoparticles was carried out using sol-gel method. B doping concentrations within the ZnO lattice were adjusted to 1, 3, 4, 5, and 10 mol%. Subsequently, nanostructured thin films were obtained through the spin coating technique on glass substrates. X-ray diffraction analysis revealed a hexagonal wurtzite structure for all nanostructured thin films. Notably, a change in preferential orientation from the (002) plane to the (100) plane occurred when B doping concentration exceeded 5 mol%. Scanning electron microscopy showcased nano-sized grains and capillary nanopores on the surface of each thin film. Energy dispersive X-ray spectra confirmed the presence of zinc, oxygen, and boron elements in the nanostructured thin films. Humidity sensing performance was assessed through electrical resistance measurements in the range of 45–90% relative humidity at room temperature. All fabricated sensors exhibited sensitivity to humidity. Remarkably, the sensor with a 5 mol% B doping concentration demonstrated the highest humidity sensitivity (438.44 times) and the fastest response (2.0 s) and recovery times (14.2 s). The study concluded that the optimal B doping concentration for designing a highly efficient humidity sensor was determined to be 5 mol%. Overall, the study underscores the potential of B doped ZnO nanostructures for humidity sensor applications, given their exceptional sensor performance.