Improved Hole Injection in Hybrid Light‐Emitting Transistors Incorporating Lithium and Copper(II) Poly(Styrene Sulfonate)

Park, Yu Jung; Park, Subin; Sim, J. W.; Lee, Jin Hee; Park, Young‐Seuk; Song, Aeran; Chung, Kwun‐Bum; Walker, Bright; Seo, Jung Hwa

doi:10.1002/admi.202300261

Cited by 3 publications

(1 citation statement)

References 38 publications

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“…Inspired by advanced low‐voltage device construction techniques in OFETs, [ 126 ] high‐ k dielectrics such as SiN x and Al 2 O 3 can be incorporated into the construction of low‐voltage OSSCLET devices. [ 127,128 ] To achieve high optical coupling output efficiency, the refractive index and light absorption properties of high‐ k dielectrics, as well as the orientation arrangement of the molecules, should also be considered and optimized. [ 129,130 ] To date, photonic devices and circuits based on OSSCLETs have not yet been investigated.…”

Section: Discussionmentioning

confidence: 99%

Organic Semiconductor Single‐Crystal Light‐Emitting Transistors

Qin

Gao

Dong

et al. 2022

Advanced Optical Materials

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adom.202201644. devices, which have been initially developed in recent years. OLETs combine the current amplification function of organic field-effect transistors (OFETs) with the electroluminescence properties of organic light-emitting diodes (OLEDs). [4][5][6][7][8][9][10] The unique operating mechanism of OLETs makes them widely recognized as one of the ideal key components for the development of next-generation transformative display technologies and the realization of organic electrically pumped lasers. In particular, the electroluminescence of unencapsulated OLETs can be directly observed in real time, which provides an ideal platform for gaining insight into the device physics of charge injection, charge transport, and carrier recombination.Since Hepp et al. [11] reported the first OLET device with an active layer of tetracene (Tc) film in 2003, OLETs have garnered increasing attention from academia and industry. Currently, the development of OLETs is slow, and device efficiency, particularly for single-component devices, is generally low. [12][13][14] The external quantum efficiency (EQE) values of single-component OLETs devices are mostly below 1%. One of the main reasons for the low EQE of OLETs is the lack of highperformance active material. Field-effect modulation and electroluminescence functions are integrated into OLET devices simultaneously; therefore, the active materials of OLETs must possess both high carrier transport and strong luminescence properties. However, these two properties are difficult to realize simultaneously in one molecule because they require contradictory molecular structures and molecular stacking. [15][16][17][18][19][20] Encouragingly, owing to the efforts devoted in recent years, significant breakthroughs have been achieved in the design and synthesis of high-mobility emissive materials. A series of high-mobility emissive material systems have been developed, which provide rich alternatives for the construction of high-efficiency OLET devices. [21][22][23][24][25][26][27][28] Currently, research on OLETs mainly focuses on the development of active materials, optimization of device structures, and characterization of operating properties. The active layers for OLET devices include solution-processed films, thermally evaporated films, and organic semiconductor single crystals. Some excellent reviews have summarized the advanced progress of OLET devices in terms of materials, device structure, display functions, and operating characteristics, [12,[29][30][31] but reviews focusing on single-crystal light-emitting transistors are currently scarce. Long-range ordered organic semiconductor single

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Section: Discussionmentioning

confidence: 99%

Organic Semiconductor Single‐Crystal Light‐Emitting Transistors

Qin

Gao

Dong

et al. 2022

Advanced Optical Materials

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Ambipolar Charge Injection and Bright Light Emission in Hybrid Oxide/Polymer Transistors Doped with Poly(9‐Vinylcarbazole) Based Polyelectrolytes

Park,

Hwang,

Park

et al. 2024

Adv Materials Technologies

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Light‐emitting transistors (LETs) are a remarkable, emerging class of electronic devices that combine the switching function of field‐effect transistors (FETs) and the light‐emitting function of light‐emitting diodes (LEDs). In order to achieve efficient light emission, effective electron and hole injection from source and drain electrodes is necessary. Various strategies have been introduced to accomplish this, such as incorporating asymmetric electrodes or charge injection layers during device fabrication. These approaches have inevitably introduced complexity in the device fabrication process. Herein, light‐emitting electrochemical transistors (LECTs) are demonstrated that combine principles of electrochemistry and optoelectronics to achieve multi‐functionality in a simple device architecture. Hybrid polyelectrolytes, poly(9‐vinylcarbazolesulfonate)‐ lithium and copper (II) salts (PVK‐Li and PVK‐Cu) incorporating Li+ ion and Cu2+ ions are added at variable concentrations to the organic emitting layer of LECTs to effect electrochemical p‐type doping. This electrochemical doping approach yielded improvements in electrical and optical performances including mobilities, brightnesses, and external quantum efficiency of the LECTs. The dynamics of how charges including ions, electrons, and holes move and interact are discussed in the device to facilitate emissive charge carrier recombination and light emission. This investigation provides valuable insights into the realms of both electrochemistry and optoelectronics.

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Efficient Charge Injection for Perovskite Light‐Emitting Transistor

Chen,

Zhang,

Zhang

et al. 2024

Advanced Optical Materials

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Metal halide perovskite semiconductors have demonstrated remarkable performance in light‐emitting‐diode applications in recent years. However, their potential application in other emerging optoelectronic devices, such as light‐emitting field‐effect transistors (LEFETs) is impeded by poor luminous efficiency due to inefficient charge injection. Here, an n‐type MgZnInO (MIZO) as the channel layer is synthesized to achieve efficient electron injection in perovskite LEFETs. These findings indicate that the incorporation of Mg not only suppresses the generation of oxygen vacancies but also optimizes the energy level alignment. These synergistic effects reduce non‐radiative recombination and improve interfacial charge transport. Consequently, the MIZO‐based perovskite LEFETs exhibit an improvement in threshold voltage, subthreshold swing, and field‐effect mobility. The electroluminescence performance shows a peak external quantum efficiency (EQE) of 1.97% with a maximum brightness of 2.1 × 104 cd m−2, accompanied by low‐efficiency roll‐off (an EQE of 1.88% at the current density of 810 mA cm−2). To the best of the author's knowledge, this represents the best luminous efficiency reported for perovskite LEFETs to date.

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Improved Hole Injection in Hybrid Light‐Emitting Transistors Incorporating Lithium and Copper(II) Poly(Styrene Sulfonate)

Cited by 3 publications

References 38 publications

Organic Semiconductor Single‐Crystal Light‐Emitting Transistors

Organic Semiconductor Single‐Crystal Light‐Emitting Transistors

Ambipolar Charge Injection and Bright Light Emission in Hybrid Oxide/Polymer Transistors Doped with Poly(9‐Vinylcarbazole) Based Polyelectrolytes

Efficient Charge Injection for Perovskite Light‐Emitting Transistor

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