Improved growth and characterization of AgGa1−xInxSe2 crystals

Growth improvement and characterization of AgGaxIn1−xSe2 chalcopyrite crystals using the horizontal Bridgman technique

“…It also helped to reduce the formation of a secondary phase. This temperature was lower in comparison with those in previous reports [4][5][6][7][8][9][10][11][12][13], where synthesis was performed at higher temperatures in the range of 900-1100 1C. The quality of synthesis and grown material was characterized by powder X-ray diffraction (XRD), energy dispersive spectrometry (EDS), simultaneous differential scanning calorimetry (DSC) and Fourier transforms infra red (FTIR).…”

“…Zhao et al [5] recently reported an increase in IR transmittance from 40% to 65% in the region of 700-6500 cm À 1 after annealing at 750 1C for 20 days in the polycrystalline powder. In order to observe a similar annealing effect the same AGIS sample was annealed at 750 1C in the presence of the polycrystalline powder for 20 days [5]. There was no significant change in transmittance after annealing when compared to the as-grown crystal.…”

“…Applications included lidar gas analyzers, optoelectronic stations for suppression, laser radars, IR tracking and IR guidance [5]. AgGaSe 2 and related quaternary materials possessing the tetragonal chalcopyrite crystal structure are primary candidates for this application because of their high nonlinear coefficients ($ 39 pm/V) and excellent transmission in the mid-IR (1-18 mm) range [6].…”

The CuGaSe2–CuInSe2–2CdS system and single crystal growth of the γ-phase

“…As a result, high quality single crystals of solid solutions can be grown [17]. Consequences of the addition of cadmium chalcogenides to chalcopyrites, however, are less predictable.…”

Mapping local defects in PbO-based piezoceramics

“…vacancies, interstitials and holes) are observed in both bulk and thin films [1][2][3]. Variations in composition ratio along the growth direction were also reported for mixed crystals grown by standard methods [4]. The point defects, present in materials even under equilibrium conditions, play an important role in electroceramics, since these are charge carriers responsible for electrical transport, mass transport and chemical kinetics [3].…”