Improved gas sensing activity in structurally defected bilayer graphene

Hajati, Yaser; Blom, Thomas; Jafri, Syed Hassan Mujtaba; Haldar, Soumyajyoti; Bhandary, Sumanta; Shoushtari, Morteza Zargar; Eriksson, Olle; Sanyal, Biplab; Leifer, Klaus

doi:10.1088/0957-4484/23/50/505501

Cited by 63 publications

(50 citation statements)

References 49 publications

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“…They can act as nucleation sites for the onset of deformation, when subjected to stress [2][3][4] . When exposed to chemical functional groups, defects can also behave as highly reactive sites and efficiently trap different molecules 5,6 . A rich variety of dislocations have recently been observed in 2D crystals such as graphene, hexagonal boron nitride and transition metal dichalcogenides (TMDs) [7][8][9][10][11][12] .…”

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confidence: 99%

Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide

et al. 2014

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Dislocations have a significant effect on mechanical, electronic, magnetic and optical properties of crystals. For a dislocation to migrate in bulk crystals, collective and simultaneous movement of several atoms is needed. In two-dimensional crystals, in contrast, dislocations occur on the surface and can exhibit unique migration dynamics. Dislocation migration has recently been studied in graphene, but no studies have been reported on dislocation dynamics for two-dimensional transition metal dichalcogenides with unique metal-ligand bonding and a three-atom thickness. This study presents dislocation motion, glide and climb, leading to grain boundary migration in a tungsten disulphide monolayer. Direct atomic-scale imaging coupled with atomistic simulations reveals a strikingly low-energy barrier for glide, leading to significant grain boundary reconstruction in tungsten disulphide. The observed dynamics are unique and different from those reported for graphene. Through strain field mapping, we also demonstrate how dislocations introduce considerable strain along the grain boundaries and at the dislocation cores.

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confidence: 99%

Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide

et al. 2014

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“…36,37 The gas molecules NH 3 and NO 2 are well-documented in the literature on graphene gas sensors. 34,38,39 While CVD graphene is highly sensitive to NO 2 , it shows relatively low sensitivity to NH 3 . 31,34,40 We therefore use NO 2 -doped graphene as our sensing element for the NH 3 tests to increase sensitivity to NH 3 .…”

Section: Resultsmentioning

confidence: 99%

3D integrated monolayer graphene–Si CMOS RF gas sensor platform

et al. 2017

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Integration of a complementary metal-oxide semiconductor (CMOS) and monolayer graphene is a significant step toward realizing low-cost, low-power, heterogeneous nanoelectronic devices based on two-dimensional materials such as gas sensors capable of enabling future mobile sensor networks for the Internet of Things (IoT). But CMOS and post-CMOS process parameters such as temperature and material limits, and the low-power requirements of untethered sensors in general, pose considerable barriers to heterogeneous integration. We demonstrate the first monolithically integrated CMOS-monolayer graphene gas sensor, with a minimal number of post-CMOS processing steps, to realize a gas sensor platform that combines the superior gas sensitivity of monolayer graphene with the low power consumption and cost advantages of a silicon CMOS platform. Mature 0.18 µm CMOS technology provides the driving circuit for directly integrated graphene chemiresistive junctions in a radio frequency (RF) circuit platform. This work provides important advances in scalable and feasible RF gas sensors specifically, and toward monolithic heterogeneous graphene-CMOS integration generally. 1-3 In these cases, power and size requirements are not critical, and such sensors tend to be large and bulky. But with the rapid expansion and prevalence of newer technologies like smart phones, cloud computing and the Internet of Things (IoT), mobile sensors are recognized as an essential component in future ubiquitous sensor networks. 4,5 The goals of IoT sensor networks require mobile and untethered sensors in quantities that negate any realistic possibility of individual sensor maintenance or battery replacement. The expectation is that the sheer number of future sensor devices, the "things" of IoT, will preclude human maintenance of individual nodes within large sensor networks. The implications for future device production are then twofold: the sensors must operate at low-power, and the cost of each device should be low enough that the expected orders of magnitude increase in sensor nodes is feasible. Much of current gas sensor research is therefore directed at the need for low-cost, low-power portable gas sensors, as well as integration with the technology platform best suited to meet that need: silicon complementary metal-oxide semiconductor (CMOS).Solid-state gas sensors cover a wide range of technologies, from microelectromechanical thermal and mass sensors to optical and chemiresistive sensors. 6,7 Of these, one of the most common is the chemisresistive sensor, whose relatively simple design and operation make it a strong candidate for CMOS integration.

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“…The change in chemical, structural or electronic surface composition by doping provides many opportunities for creating surfaces with tailored physicochemical properties, for tuning the electronic properties of semiconductor material, and for enhanced detection of a target analyte. Hajati et al reported graphene with a capability of gas sensing was shown to be drastically improved by inducing gentle disorder in the lattice through Ga + ion interaction [13]. Rare earth elements doping in metaloxide semiconductors to improve gas sensitivity have been reported by Li et al (Pr doped in SnO 2 [14] and Ce doped ZnO [15]), by Cheng et al (Y-doped SnO 2 prismatic hollow nanofibers) [16], by Song et al (Ce element doped in SnO 2 ) [17] and so on.…”

Section: Introductionmentioning

confidence: 99%