Improved gain 60 GHz CMOS antenna with N-well grid

Abstract

This paper presents a novel technique to enhance Antenna-onChip gain by introducing a high resistivity layer below it. Instead of using the costly ion implantation method to increase resistivity, the N-well that is available in the standard CMOS process is used. A distributed grid structure of N-well on P-type substrate is designed such that the P and N semiconductors types are fully depleted forming a layer with high resistivity. By an electromagnetic simulation, the using depletion layers enhance the antenna gain and radiation efficiency without increasing the occupied area. The simulated and measured |S11| are in fair agreement. The measured gain is −1.5 dBi at 66 GHz.

Innovative Techniques for 60-GHz On-Chip Antennas on CMOS Substrate

“…A PNJ creation results from the coexistence of the P and N semiconductor types. A depletion layer, which is carriers' free area, will appear between the two semiconductors' types [22,23]. Subsequently, in this section, we employ this depletion layer concept in the OCA's gain-toactive-area ratio enrichment, as will be clarified in the following sections.…”

“…(2) and Eq. (3), respectively, where, K is Boltzmann constant, T is temperature, q is electron's charge, N a and N d are acceptors and donors doping concentrations in P-type and Ntype, respectively, while n i and ε s are intrinsic doping and permittivity of the silicon, respectively, and V a is bias voltage applied on the PNJ [22,23]. The width of depletion on the P-type (x P ) and N-type (x N ) semiconductors can be computed as Eq.…”

Method of Moments versus Advanced Transverse Wave Approach for EM Validation of Complex Microwave and RF Applications

“…Today, involved in EM simulation takes larger and complex shapes that can affect the notion of libraries. An introduction of additional restrictions in the elaboration of models and parameters can be a good strategy to account for the topology of the implantations [7,8]. The complexity related to the number of these parameters tends to reach high levels due to the attitude of "simulate all".…”

Gain enhancement in cubic DRA with modified microstrip feed for WLAN applications

“…During early 80's the dielectric resonator was first adopted as an antenna element, called dielectric resonant antenna (DRA), using the waveguide model. The major property of DRA is that it presents low conductor losses as compared to its metallic counterparts at high frequencies [2,3]. Furthermore, due to the presence of 3D structure an extra degree of freedom is obtained in exciting different modes in a single antenna element thus resulting in high gains as compared to those achieved with metallic antennas.…”