2018
DOI: 10.1016/j.mtcomm.2018.09.025
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Improved energy storage density of composite films based on poly(arylene ether nitrile) and sulfonated poly(arylene ether nitrile) functionalized graphene

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Cited by 15 publications
(13 citation statements)
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“…According to previous reports [20], when the amount of ZnPc@BT is added as high as 30%, the dielectric constant of the composites is still about 6.0. This reveals that a significant increase in dielectric constant is achieved with low additions of graphene, which is due to the fact that heterojunction between the conductor and the ferroelectric increases the dielectric constant of the composites [29]. Meanwhile, the mismatch in conductivity between the two phases of GO and ZnPc results in more and more free carriers accumulating at the interface and producing strong interfacial polarization, which further leads to an increase in dielectric constant.…”
Section: Resultsmentioning
confidence: 94%
“…According to previous reports [20], when the amount of ZnPc@BT is added as high as 30%, the dielectric constant of the composites is still about 6.0. This reveals that a significant increase in dielectric constant is achieved with low additions of graphene, which is due to the fact that heterojunction between the conductor and the ferroelectric increases the dielectric constant of the composites [29]. Meanwhile, the mismatch in conductivity between the two phases of GO and ZnPc results in more and more free carriers accumulating at the interface and producing strong interfacial polarization, which further leads to an increase in dielectric constant.…”
Section: Resultsmentioning
confidence: 94%
“…The densities ( ρ ) and void fraction ( f ) of the porous PEN films were calculated according to Equations () and (), respectively. ρ=mv, f=1ρρ×100%, where, ρ ′ was the density of dense PEN film, which was also measured according to Equation (). The dense PEN films were fabricated through the solution casting method with NMP as solvent (M PEN :V NMP = 1 g:8 ml) 42,43 . The densities ( ρ ) and void fraction ( f ) of the porous PEN films were listed in Table 4.…”
Section: Methodsmentioning
confidence: 99%
“…The dense PEN films were fabricated through the solution casting method with NMP as solvent (M PEN :V NMP = 1 g:8 ml). 42,43 The densities (ρ) and void fraction (f ) of the porous PEN films were listed in Table 4. The densities of dense PEN film (ρ 0 ) were shown in Table 2, which were the same value as the bulk densities of PEN copolymers.…”
Section: Characterizationmentioning
confidence: 99%
“…Tang et al introduced graphene oxide (GO), which was modified with sulfonated polyarylene ether nitrile (SPEN), into polyarylene ether nitrile (PEN) to prepared SPEN@GO/PEN composite films with improved energy density and low dielectric loss. The films showed potential applications at organic film capacitors 14 . Other researches of GO, 15,16 functionalized BN, 17 BaTiO 3 18 and Fe 3 O 4 , 19 and their polymer based composites were also widely investigated.…”
Section: Introductionmentioning
confidence: 99%