2012
DOI: 10.1007/s00339-012-6891-9
|View full text |Cite
|
Sign up to set email alerts
|

Improved electrical properties in La- and V-co-doped Na0.5Bi4.5Ti4O15 thin films

Abstract: Ferroelectric La-and V-co-doped Na 0.5 Bi 4.5 Ti 4 O 15 (NLBTV) thin film was prepared on Pt(111)/Ti/SiO 2 /Si substrates by using a chemical solution deposition method and annealed at 750°C under oxygen atmosphere. Crystal structure of the thin film was investigated by X-ray diffraction and Raman scattering. Surface morphology of the thin film was investigated by scanning electron microscopy. The NLBTV thin film capacitor exhibited better ferroelectric properties such as larger remnant polarization and smalle… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

1
1
0

Year Published

2013
2013
2015
2015

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(2 citation statements)
references
References 24 publications
1
1
0
Order By: Relevance
“…Co‐doping of Na 0.5 Bi 4.5 Ti 4 O 15 thin films with La and V reduced the leakage current and improved ferroelectric properties as well as the fatigue behavior up to 1.4 × 10 10 switching cycles . Similar behavior was found for La–W co‐doped BTO bulk ceramics .…”
Section: Fatigue Of Lead‐free Ferroelectricssupporting
confidence: 66%
“…Co‐doping of Na 0.5 Bi 4.5 Ti 4 O 15 thin films with La and V reduced the leakage current and improved ferroelectric properties as well as the fatigue behavior up to 1.4 × 10 10 switching cycles . Similar behavior was found for La–W co‐doped BTO bulk ceramics .…”
Section: Fatigue Of Lead‐free Ferroelectricssupporting
confidence: 66%
“…Improved remanent polarization, dielectric constant and piezoelectric coefficient were observed with the increase of grain size. 33,34 Fig.…”
Section: Resultsmentioning
confidence: 99%