Improved electrical characteristics of porous germanium photodiode obtained by phosphorus ion implantation

Akkari, Emna; Touayar, O.; Campo, F. Javier del; Montserrat, J.

doi:10.1504/ijnt.2013.053524

Cited by 3 publications

(6 citation statements)

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“…These substrates have a reflectivity of about 33% for the wavelength range between 800 nm and 2000 nm [1,2]. Ion implantation is performed by the ion implanter installed in Microelectronics Institute of Barcelona in Spain.…”

Section: Np Germanium Junctions Characterizationmentioning

confidence: 99%

“…Ion implantation is performed by the ion implanter installed in Microelectronics Institute of Barcelona in Spain. It is performed with an ionizing beam energy of 150 keV for phosphorus impurity doses of 1 Â 10 À15 atm/ cm 2 [1,9,10]. The realized junctions have a junction depth of about 0.4 mm.…”

Section: Np Germanium Junctions Characterizationmentioning

confidence: 99%

“…The method of determining the electrical parameters of the photodiode has been widely detailed in several publications [1,11]. This method is based on the tracing of the corresponding characteristics Ln(I) = f(V) from the experimental responses I-V.…”

Section: Electrical Characterization Of Germanium Junctionsmentioning

confidence: 99%

“…Research work carried out within the metrology group of radiometric and pyrometric measurements of INSAT, have achieved NP junctions by ion implantation from Ge p-type substrate and the realization of porous germanium photodiodes [1][2][3]. These studies have shown an improvement in the absorption of the incident light with respect to the commercial photodiodes based on the junction germanium.…”

Section: Introductionmentioning

confidence: 99%

“…(1)) which itself depends on the diffusion constant of the charge carriers in the semiconductors [1,6].…”

Section: Introductionmentioning

confidence: 99%

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Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

Achour

Hammami

Touayar

2017

Int. J. Metrol. Qual. Eng.

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Abstract. The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range. In this work, we present the design and realization of a detector for near infrared radiation measurements: it is a photodiode ZnO/Ge based on a germanium junction and a thin layer of zinc oxide. Then we electrically and optically characterized the photodiode thus realized, for which we developed an energy band diagram. The obtained results have allowed us to note an improvement in the optical and electrical characteristics of the ZnO/Ge photodiode, compared to those performed in our laboratory and based on single Germanium. The reflectivity is reduced by about 9% for the wavelength range of 800 nm to 2000 nm. The shunt resistance increases from 95 V to 12.915 kV. However, the series resistance increases from 1.08 V to 36 V but it is still an acceptable value. The proposed energy band diagram explains the charge carrier transport phenomena for our structure and it is in good agreement with experimental results.

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Section: Np Germanium Junctions Characterizationmentioning

confidence: 99%

Section: Np Germanium Junctions Characterizationmentioning

confidence: 99%

Section: Electrical Characterization Of Germanium Junctionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…(1)) which itself depends on the diffusion constant of the charge carriers in the semiconductors [1,6].…”

Section: Introductionmentioning

confidence: 99%