Improved efficiency of Cu(In,Ga)Se2 thinfilm solar cells using a buffer layer alternative to CdS

A Comparative Study of (Cd,Zn)S Buffer Layers for Cu(In,Ga)Se2 Solar Panels Fabricated by Chemical Bath and Surface Deposition Methods

“…This result well coincides with the previous report that Zn addition increases the ban-gap of the buffer layer. It thus results in lower optical loss from the buffer layer (i.e., better blue photon response) and a suitable conduction band offset with CIGS light-absorber layer due to a reduced conduction band discontinuity at the (Cd,Zn)S/CIGS junction [34][35][36]. Hamri et al [36] revealed in recent theoretical work that the open-circuit voltage (V OC ) slightly increases by the change on the Zn concentration from 0 to 0.6 (relative to the Cd), above which the presence of spike at the interface hinders a feasible electrons transfer from the CIGS.…”

A Modeling Study on Utilizing In2S3 as the Buffer Layer of Cu(In,Ga)Se2 Based Solar Cell

“…By varying the band gap of In 2 S 3 (Na y Cu 1−y In 5 S 8 ), a wide range of CBO between the absorber layer and the buffer (as an interfacial layer) was covered; thus, it allowed the offset to be tuned to an optimal value for any GGI ratio in the CIGS absorber layer. Figure 3a buffer layer, the current was boosted slightly since the wide band gap of In 2 S 3 allowed for greater absorption of short-wavelength photons [8,41]. J SC was not notably changed by varying the GGI ratio.…”

“…One can argue that the incorporation of high Ga content into the SCR increases the barrier height, which facilities band-gap widening in the SCR and reduces the recombination rate [8,43].…”

“…One of the most in uential parameters in forming buffer layers is conduction band offset (CBO) at the buffer-CIGS absorber interface [7][8][9]. A good alignment of conduction bands reduces recombination at the buffer-CIGS absorber interface [7][8][9]. Thus, it is required to optimally align the conduction band edge of the p-type CIGS absorber layer with that of the n-type buffer layer so as to obtain a good p-n junction [7][8][9].…”

Design of CuIn 1− y Ga y Se 2 /Si 1 − x Ge x Tandem solar cells with controlled current matching

“…Chalcopyrite Cu (In, Ga) Se 2 (CIGS) has become encouraging absorber for thin-film PVs. Researchers recently focused on the advancements and emerging concepts to achieve high-efficiency thin-film solar cells [7][8][9][10][11][12][13][14][15][16][17][18]. CIGS tandem solar cells which monolithically integrated or mechanically stacked are one of the major issues in PV investigations [19].…”