2010
DOI: 10.1016/j.tsf.2009.11.072
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Improved dielectric and ferroelectric properties in Ti-doped BiFeO3–PbTiO3 thin films prepared by pulsed laser deposition

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Cited by 30 publications
(22 citation statements)
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“…In general, the BFO epitaxial films possess a larger polarization, 87,97,295,349 while the polycrystalline films often suffer from a high electrical leakage due to Fe valence fluctuation and the existence of some secondary phases. 285 Among the many methods proposed to overcome the leakage current in polycrystalline BFO thin films, one is to develop the BFO solid solutions with certain ABO 3 structured perovskite oxides 296,301,304,324,[350][351][352][353][354][355][356][357][358] (e.g., PbTiO 3 , 296,301,304,324,[350][351][352][353][354] Bi 0.50 Na 0.50 TiO 3…”
Section: Addition Of Abomentioning
confidence: 99%
“…In general, the BFO epitaxial films possess a larger polarization, 87,97,295,349 while the polycrystalline films often suffer from a high electrical leakage due to Fe valence fluctuation and the existence of some secondary phases. 285 Among the many methods proposed to overcome the leakage current in polycrystalline BFO thin films, one is to develop the BFO solid solutions with certain ABO 3 structured perovskite oxides 296,301,304,324,[350][351][352][353][354][355][356][357][358] (e.g., PbTiO 3 , 296,301,304,324,[350][351][352][353][354] Bi 0.50 Na 0.50 TiO 3…”
Section: Addition Of Abomentioning
confidence: 99%
“…More recently Chen reported films deposited by PLD of 0.72Bi(Fe 1-x Ti x )O 3 -0.28PbTiO 3 (x = 0 and 0.02) on Pt/TiO x /SiO 2 /Si substrates. Although P-E ferroelectric hysteresis loops were not completely saturated a large remnant polarization of 80 µCcm -2 was obtained in the doped films at room temperature [19,20].…”
mentioning
confidence: 91%
“…Careful choice of end members and their compositions is required. Although ferroelectric epitaxial solid solution thin films have been reported so far [24][25][26][27][28], the idea of enhancing ferroelectric and dielectric properties in Pb-free ferroelectrics films by selecting the right chemistry for defect reduction at the same time as enhancement of the temperature of the dielectric maximum has not been considered to date. In this study, we propose and demonstrate a way to do this.…”
Section: Introductionmentioning
confidence: 99%