2021 IEEE Applied Power Electronics Conference and Exposition (APEC) 2021
DOI: 10.1109/apec42165.2021.9487168
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Improved De-Saturation Protection Circuits for Silicon Carbide MOSFET Gate Drivers

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Cited by 8 publications
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“…This could cause reliability problems for SiC MOSFET's applications. Then, this design method is improved in [9][10], and the short-circuit protection's response time is reduced from several µs to several hundred ns.…”
Section: Introductionmentioning
confidence: 99%