“…This could cause reliability problems for SiC MOSFET's applications. Then, this design method is improved in [9][10], and the short-circuit protection's response time is reduced from several µs to several hundred ns.…”
“…This could cause reliability problems for SiC MOSFET's applications. Then, this design method is improved in [9][10], and the short-circuit protection's response time is reduced from several µs to several hundred ns.…”
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