Improved crystal quality of semipolar (10<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si0009.gif" overflow="scroll"><mml:mrow><mml:mover accent="true"><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>¯</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:math>3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer

Lee, Hojun; Bae, Si‐Young; Lekhal, Kaddour; Mitsunari, Tadashi; Tamura, Akira; Honda, Yoshio; Amano, Hiroshi

doi:10.1016/j.jcrysgro.2016.09.004

Cited by 15 publications

(8 citation statements)

References 37 publications

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“…Several reports aimed to improve the integrities and isolation performances of GaN-on-Si devices through robust buffer layer designs, including superlattice (SL) [11,12], backbarrier [7,13,14] and C-doped GaN [15,16], etc. Among them, the SL structure is more popular for the development of low-stress GaN.…”

Section: Introductionmentioning

confidence: 99%

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Hieu¹,

Hsu²,

Chiang³

et al. 2022

Semicond. Sci. Technol.

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In this study, the effects of AlN/GaN superlattice (SL) thickness on performances of AlGaN/GaN high electron mobility transistor (HEMT) heterostructure grown by metal-organic chemical vapor deposition (MOCVD) on silicon is investigated. Stress in GaN is controlled by varying the total thickness of the AlN/GaN SL. Improved crystal quality and surface roughness accomplished with 2200 nm-thick AlN/GaN SL, leads to an increase in high electron mobility (1760 cm2/V·s) as well as two-dimensional electron gas (2DEG) concentration (1.04×1013 cm-2). AlGaN/GaN metal-insulator-semiconductor HEMT (MIS-HEMT) fabricated on the heterostructure with SL buffer layer exhibits a significant improvement in maximum saturation current of 1100±29 mA/mm at VGS = 0 V and a low on-resistance (RON) of 4.3±0.15 Ω·mm for the optimized AlN/GaN SL. The 2200 nm-thick AlN/GaN SL supports the growth of stress-free GaN heterostructure, which can reduce the insertion loss for sub-6 GHz RF applications. This GaN HEMT structure based on superlattice buffer layer is suitable for low-frequency RF power applications.

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Section: Introductionmentioning

confidence: 99%

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Hieu¹,

Hsu²,

Chiang³

et al. 2022

Semicond. Sci. Technol.

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“…[ 18 ] There has been considerable research of nitride LED on CMOS‐compatible Si(100) substrates. [ 19 ] As a result of the high lattice mismatch and large thermal expansion coefficients difference between GaN and Si, [ 20,21 ] it is difficult to grow GaN on a Si planar substrates directly. Several approaches have attempted to resolve this difficulty by inserting multiple intermediate layers, such as a low‐temperature AlN or GaN buffer, or Al x Ga 1− x N multilayers.…”

Section: Introductionmentioning

confidence: 99%

Luminescence Characteristics in Hexagonal and Cubic‐Phase GaN on Micropatterned Si(100) Substrate

Zhou

Huang

Wang

et al. 2021

Physica Status Solidi (b)

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The luminescence characteristics of the hexagonal GaN (h‐GaN) and cubic GaN (c‐GaN) on micropatterned Si(100) substrates are explored. Microstripes of InGaN/GaN multiple quantum wells in the cubic and hexagonal phases are grown on V‐grooved Si(100) substrate. The crystal phases are identified by X‐ray diffraction and selective area electron diffraction, which shows the top surface is c‐GaN(001) phase at the center and h‐GaN(11¯01) at the side regions. Then, the energy dispersive X‐ray spectra of the indium content demonstrate the indium content in cubic InGaN/GaN multiple quantum wells (c‐MQWs) is higher than that in hexagonal InGaN/GaN MQWs (h‐MQWs). In addition, photoluminescence and cathodoluminescence measurements reveal that a cubic InGaN/GaN quantum well has produced longer wavelengths. The c‐MQWs could incorporate higher indium content and realize longer wavelength emissions, which has great potential to realize red light emitting diode.

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“…27) However, direct growth on m-plane sapphire usually leads to a formation of twinned N-polar (10-1-3) GaN due to inherent twofold symmetry of the bonds at the GaN/sapphire interface. [28][29][30] Recently, untwinned (10-13) GaN layers were reported using directional sputtering on (001) Si [31][32][33] and m-plane sapphire. 34) Semi-polar orientations even more inclined towards (0001) have been only reported by planar growth on (112) and (113) Si.…”

Section: Introductionmentioning

confidence: 99%

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

Hu¹,

Dinh²,

Pristovsek³

et al. 2019

Jpn. J. Appl. Phys.

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We have studied the impact on the surface orientation of different sputtered Al layers followed by AlN layers sputtered on m-plane sapphire. These initial layers were then overgrown by AlN and followed by GaN using metal-organic vapor phase epitaxy (MOVPE). By increasing sputtering time of the initial Al layer from 0 s to 15 s, we obtained single phase (10-10), (10-13) and (10-14) GaN/AlN layers. The thickness of the initial Al layer was estimated by optical transmission measurements to be about 0.5-1 nm for the (10-13) orientation, and >1 nm for the (10-14) orientation. After MOVPE growth, no trace of metallic Al was found by transmission electron microscopy, indicating that this layer was fully converted to AlN.

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Improved crystal quality of semipolar (101¯3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer

Cited by 15 publications

References 37 publications

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Luminescence Characteristics in Hexagonal and Cubic‐Phase GaN on Micropatterned Si(100) Substrate

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

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