“…At low fields the J c values for the 10 and 15 wt % SiC doped wires are lower than those for the undoped samples at both 5 and 20 K. As it was shown in previous studies, SiC doping deteriorated J c values at low field regions. 2,13,17 According to x-ray diffraction ͑XRD͒ results ͑not shown; see, e.g., Ref. 12͒, the main impurity in studied SiC doped samples was Mg 2 Si, which increased with increasing doping level, but decreased with increasing sintering temperature.…”