We report the synthesis of perovskite RENiO 3 films (RE = La, Pr, Nd, Sm, and Eu) by metal organic decomposition (MOD). The RENiO 3 family is an ideal system for studying the metal-insulator transition due to the simplicity of the materials. One of the drawbacks is that the bulk synthesis of the RENiO 3 requires processing at high oxygen pressures to stabilize Ni 3+. Fundamentally, MOD is similar to solid-state reaction, but it turned out that the MOD synthesis tends to stabilize RENiO 3 without the need for high oxygen pressure. The films prepared by MOD show high crystallinity and low resistivity. Furthermore, we have investigated the epitaxial strain effect and observed a dramatic effect in PrNiO 3 and NdNiO 3 films on LaAlO 3 substrates. The metal-insulator transition in the PrNiO 3 films on LaAlO 3 is fully suppressed, whereas the metal-insulator transition temperature is considerably lowered in the NdNiO 3 films on LaAlO 3 .