Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤50 nm) by Interface-Modulated Solid-Phase Crystallization Combined with Thinning

Chiyozono, Masanori; Gong, Xiangsheng; Sadoh, Taizoh

doi:10.23919/am-fpd49417.2020.9224510

2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2020

DOI: 10.23919/am-fpd49417.2020.9224510

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Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤50 nm) by Interface-Modulated Solid-Phase Crystallization Combined with Thinning

Masanori Chiyozono

Xiangsheng Gong

Taizoh Sadoh

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Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤50 nm) by Interface-Modulated Solid-Phase Crystallization Combined with Thinning

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