Improved bias stress stability of In–Ga–Zn–O thin film transistors by UV–ozone treatments of channel/dielectric interfaces

Lee, Min Jung; Lee, Tae Il; Cho, Joong Hwee; Lee, Woong; Myoung, Jae Min

doi:10.1016/j.mssp.2014.10.016

Cited by 8 publications

(1 citation statement)

References 18 publications

(30 reference statements)

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“…Nevertheless, considering that the high-resolution backplane or high-framerate 3D display requires a mobility of 20-50 cm 2 ·V −1 ·s −1 , some issues of AOS such as low mobility (IGZO ~10 cm 2 ·V −1 ·s −1 ) and sensitivity to external environments are waiting to be resolved [ 27 ]. The insufficient mobility is due to the component of Ga, which is so high that degrades the mobility dramatically [ 28 , 29 ]. In addition, Ga 2 O 3 is acid-soluble and easy to be damaged in the wet etching process [ 30 ].…”

Section: Introductionmentioning

confidence: 99%

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Yao

et al. 2021

Research

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Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology. The effect of a Cu-Cr-Zr (CCZ) copper alloy source/drain (S/D) electrode on flexible amorphous neodymium-doped indium-zinc-oxide thin-film transistors (NdIZO-TFTs) was investigated. Compared with pure copper (Cu) and aluminum (Al) S/D electrodes, the CCZ S/D electrode changes the TFT working mode from depletion mode to enhancement mode, which is ascribed to the alloy-assisted interface layer besides work function matching. X-ray photoelectron spectroscopy (XPS) depth profile analysis was conducted to examine the chemical states of the contact interface, and the result suggested that chromium (Cr) oxide and zirconium (Zr) oxide aggregate at the interface between the S/D electrode and the active layer, acting as a potential barrier against residual free electron carriers. The optimal NdIZO-TFT exhibited a desired performance with a saturation mobility (μsat) of 40.3 cm2·V-1·s-1, an Ion/Ioff ratio of 1.24×108, a subthreshold swing (SS) value of 0.12 V·decade-1, and a threshold voltage (Vth) of 0.83 V. This work is anticipated to provide a novel approach to the realization of high-performance flexible NdIZO-TFTs working in enhancement mode.

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