Abstract:We show that our exact one-dimensional Airy function formalism for studying electron resonant tunneling in multibarrier semiconductor heterostructures is an improvement on a previous calculation of Brennan and Summers [J. Appl. Phys. 61, 614 (1987)]. We also clearly demonstrate that our method gives better agreement with the numerical approach of Vassell, Lee, and Lockwood [J. Appl. Phys. 54, 5206 (1983)] in calculating the transmission coefficient T(E) and current density J(E) for multibarrier semiconductor h… Show more
“…Therefore, these situations, have motivated us to examine numerically, using the transfer matrix formalism [43][44][45], the effects of random dimmer-barrier superlattices (RDBSL) on the nature of the eigenstates of 1D-disordered SL according to the corresponding conductance distribution regime.…”
“…Therefore, these situations, have motivated us to examine numerically, using the transfer matrix formalism [43][44][45], the effects of random dimmer-barrier superlattices (RDBSL) on the nature of the eigenstates of 1D-disordered SL according to the corresponding conductance distribution regime.…”
“…Knowing the electron energy and the shape of surface potential, according to onedimensional Schrödinger equation, the transmission coefficient that the photoelectron passes through the surface potential can be received. The one-dimensional Schrödinger equation can be solved with transfer matrix method based on Airy function [13][14][15], consequently the transmission coefficient can be described quantificationally. The widths of potential I and II are expressed by b and c respectively, and end heights are expressed by V 2 and V 3 respectively.…”
Section: Photoelectrons Pass Through the Surface Potentialmentioning
“…The wave functions and their first derivatives in the five regions are matched at the interfaces between the regions. The matching results in a system of equations, which can be represented in a matrix form [21],…”
Using the transfer matrix method and the effective-mass approximation, the
effect of resonant states on spin transport is studied in
ZnSe/ZnMnSe/ZnSe/ZnMnSe/ZnSe structures under the influence of both electric
and magnetic fields. The numerical results show that the ZnMnSe layers, which
act as spin filters, polarize the electric currents. Variation of thickness of
the central ZnSe layer shifts the resonant levels and exhibits an oscillatory
behavior in spin current densities. It is also shown that the spin polarization
of the tunneling current in geometrical asymmetry of the heterostructure where
two ZnMnSe layers have different Mn concentrations, depends strongly on the
thickness and the applied bias.Comment: 13 pages, 6 figure
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