Importance of precursor delivery mechanism for Tetra-kis-ethylmethylaminohafnium/water atomic layer deposition process

Tomer, Shweta; Vandana, .; Panigrahi, Jagannath; Srivastava, Ritu; Rauthan, C. M. S.

doi:10.1016/j.tsf.2019.137629

Cited by 10 publications

(6 citation statements)

References 25 publications

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“…From the table 1, we can see that film thickness increases with an increasing number of ALD cycles, where the growth per cycle, i.e., the GPC value, calculated by dividing film thickness with the number of ALD cycles is ∼0.14 nm/cycle using XRR data, however, slightly lower values (∼0.13 nm/cycles −1 ) are obtained using thickness values calculated by Ellipsometry. For all thicknesses, the refractive index for the deposited films was found to be ∼2 at 632.8 nm (Ellipsometry), which is in close approximation with the previously reported values [36]. It is observed that with an increase in a number of ALD cycles (200), the GPC value is reducing slightly in both the measurements using XRR and Ellipsometry; and interfacial oxide thickness is reducing at higher thicknesses.…”

Section: Film Thicknesssupporting

confidence: 87%

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Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

Devi,

Tomer,

Pathi

et al. 2024

Phys. Scr.

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We investigate the silicon surface passivation property of Plasma Atomic Layer Deposited (PALD) hafnium oxide (HfOx) thin films and study its dependence on silicon (Si) doping type, film thickness, and post-deposition annealing conditions. Our results demonstrate that as-deposited HfOx films exhibit poor passivation quality that can be improved by performing post-deposition annealing at 450℃ in hydrogen ambient. We demonstrate that the films can effectively passivate p-Si surfaces as compared to n-Si, where the surface passivation quality of the films improves with increasing film thickness for both silicon doping type. The best performance with minority carrier lifetime of 1.7 ms, corresponding surface recombination velocity (SRV) ~10 cm/s, is achieved for HfOx films thickness ~23 nm deposited on the p-Si substrate. The Capacitance-Voltage (C-V) measurements give an insight into the passivation mechanism of the studied films. Field effect passivation is found to be an important passivation mechanism in plasma ALD deposited HfOx films, as revealed by C-V measurements. The films are also characterized using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS), which reveals the chemical passivation provided by hydrogen ambient annealing. Overall, the impact of hafnium oxide film thickness and hydrogen ambient annealing conditions on silicon surface passivation is investigated. Our findings will help in utilizing plasma ALD process based hafnium oxide films for silicon solar cell device application.

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Section: Film Thicknesssupporting

confidence: 87%

“…Herein, we have used 25 kW plasma power for oxygen plasma generation. Due to the low vapor pressure of the TEMAHf precursor, it needs to be heated to realize sufficient vapor pressure for the effective delivery of TEMAHf vapors into the reaction chamber [36].…”

Section: Methodsmentioning

confidence: 99%

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

Devi,

Tomer,

Pathi

et al. 2024

Phys. Scr.

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“…A higher (lower) saturated vapor pressure of the precursor tends to lead to a tall (short) peak, as shown in Figure a (Figure b). If a larger amount of the precursor per ALD cycle is required for a certain precursor with a low saturated vapor pressure, a multiple-valve method (Figure b) or a carrier-gas-enhanced dosing can be adopted. Sometimes, an extremely low dosing amount is needed for some ALD-based membrane fabrication, and the modification of the gasket in the precursor container can be employed .…”

Section: Results and Discussionmentioning

confidence: 99%

CFD Simulation of the Dosing Behavior within the Atomic Layer Deposition Feeding System

Yuan

Ping

Lee

et al. 2023

Ind. Eng. Chem. Res.

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The effective operation of atomic layer deposition (ALD) feeding system is the premise of realizing specific ALD processes. In the present work, a detailed computational fluid dynamics (CFD) model of the feeding system has been developed and validated, which accounts for the roles of ALD valves and manifolds. A numerical simulation of the compressible fluid flow and heat/mass transfer within the feeding system was conducted. The dosing amounts and the spatiotemporal distributions of the precursors can be accurately predicted using the CFD model, as validated by experimental results. Different precursors, operating conditions, and structures of the feeding system were simulated and analyzed to examine the operating flexibility of the feeding system. The simulation results can be adopted as the upstream boundary conditions for simulations of the ALD process in the reaction chamber. The substrate-scale simulation indicates that the effect of the feeding system on the film deposition is highly related to the surface kinetics of ALD. The present work can serve as a guide for the development and optimization of different ALD-based processes via proper operation and even the design of the feeding system.

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“…36,37) In the ALD method, the deposition conditions, such as the pulse and purge times of the precursors and the substrate temperature, are determined by whether the film growth is saturated or not, and this is called the ALD window. 38) Therefore, we fabricated HfO 2 and ZrO 2 thin films on a (001) Si substrate by first changing various conditions to find the ALD window. According to the fundamental optimization of the deposition conditions, the ALD conditions shown in Table I were used in this work.…”

Section: Experimental Methodsmentioning

confidence: 99%

The ferroelectric orthorhombic phase formation of Hf_0.5Zr_0.5O₂ thin films on (−201) β-Ga₂O₃ substrate by atomic layer deposition

Naito¹,

Yamaguchi

Yoshimura³

et al. 2023

Jpn. J. Appl. Phys.

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The orthorhombic (O) phase formation process of Hf0.5Zr0.5O2 (HZO) thin films on Ga2O3 substrate is demonstrated. As deposited HZO thin film has the O and tetragonal (T) phases together with an amorphous phase and post-metallization annealing suppresses the crystallization into the T phase and promotes the O phase compared to annealing without a top electrode. Positive-up-negative-down measurement reveals that remanent polarization for the downwards (accumulation side) only originates from the ferroelectricity in HZO films on Ga2O3 substrate. Using normal capacitance–voltage (C–V) measurements, a clear capacitance change from accumulation to depletion was observed. However, the C–V results also show clockwise hysteresis by charge injection from the semiconductor. High-speed C–V measurements at a voltage sweep frequency above 3 Hz show counterclockwise hysteresis, and hysteresis width saturate as the applied voltage increases. Based on these results, HZO thin films with O phase on Ga2O3 substrates have ferroelectricity.

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Importance of precursor delivery mechanism for Tetra-kis-ethylmethylaminohafnium/water atomic layer deposition process

Cited by 10 publications

References 25 publications

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

CFD Simulation of the Dosing Behavior within the Atomic Layer Deposition Feeding System

The ferroelectric orthorhombic phase formation of Hf_0.5Zr_0.5O₂ thin films on (−201) β-Ga₂O₃ substrate by atomic layer deposition

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Importance of precursor delivery mechanism for Tetra-kis-ethylmethylaminohafnium/water atomic layer deposition process

Cited by 10 publications

References 25 publications

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

CFD Simulation of the Dosing Behavior within the Atomic Layer Deposition Feeding System

The ferroelectric orthorhombic phase formation of Hf0.5Zr0.5O2 thin films on (−201) β-Ga2O3 substrate by atomic layer deposition

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Resources

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The ferroelectric orthorhombic phase formation of Hf_0.5Zr_0.5O₂ thin films on (−201) β-Ga₂O₃ substrate by atomic layer deposition