2014
DOI: 10.1063/1.4865107
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Implicit solvation model for density-functional study of nanocrystal surfaces and reaction pathways

Abstract: The computational study of chemical reactions in complex, wet environments is critical for applications in many fields. It is often essential to study chemical reactions in the presence of applied electrochemical potentials, taking into account the non-trivial electrostatic screening coming from the solvent and the electrolytes. As a consequence, the electrostatic potential has to be found by solving the generalized Poisson and the Poisson-Boltzmann equations for neutral and ionic solutions, respectively. In t… Show more

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Cited by 1,854 publications
(1,679 citation statements)
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“…2 kcal mol −1 (78). This approach expresses the dispersion contribution to the solvation free energy as being proportional to the exposed molecular surface area (27,29), and so we express the change in solvation energy on SAM formation as ΔE s = ΔE s,SAM − ΔE s,P − ΔE s,HOPG = −αðA SAM − A P − A HOPG Þ [6] where ΔE s,SAM , ΔE s,P , and ΔE s,HOPG are the solvation energies of the SAM, the porphyrin in solution, and a solvated bare HOPG surface, respectively, and A SAM , A P , and A HOPG are the corresponding exposed surface areas. The proportionality constant α = 0.0866 kcal mol −1 Å −2 is fitted to B3LYP/6-31G* calculated data for the optimized structures of C 11 P and C 19 P. All exposed surface areas are evaluated using the solvent-excluded surface obtained using van der Waals radii of 1.55 Å, 1.7 Å, and 1.2 Å for N, C, and H, respectively, and the solvent "radius" is taken to be 2.2 Å.…”
Section: Methodsmentioning
confidence: 99%
See 2 more Smart Citations
“…2 kcal mol −1 (78). This approach expresses the dispersion contribution to the solvation free energy as being proportional to the exposed molecular surface area (27,29), and so we express the change in solvation energy on SAM formation as ΔE s = ΔE s,SAM − ΔE s,P − ΔE s,HOPG = −αðA SAM − A P − A HOPG Þ [6] where ΔE s,SAM , ΔE s,P , and ΔE s,HOPG are the solvation energies of the SAM, the porphyrin in solution, and a solvated bare HOPG surface, respectively, and A SAM , A P , and A HOPG are the corresponding exposed surface areas. The proportionality constant α = 0.0866 kcal mol −1 Å −2 is fitted to B3LYP/6-31G* calculated data for the optimized structures of C 11 P and C 19 P. All exposed surface areas are evaluated using the solvent-excluded surface obtained using van der Waals radii of 1.55 Å, 1.7 Å, and 1.2 Å for N, C, and H, respectively, and the solvent "radius" is taken to be 2.2 Å.…”
Section: Methodsmentioning
confidence: 99%
“…Only for this structural motif were the calculations performed alternatively, optimizing the energy in the presence of the solvent. Note that an implementation of this type of optimization (without a solvent-excluded-surface option) has just become available in VASP (29).…”
Section: Methodsmentioning
confidence: 99%
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“…47 Here, self-consistent wavefunctions were reevaluated at the GGA level in the presence of the continuum solvation field. These wavefunctions were subsequently used as input to G 0 W 0 calculations.…”
mentioning
confidence: 99%
“…This approach has long been used in the quantum chemistry community to study ionic and molecular solvation, 227 and similar ideas are now beginning to be adapted for solid-liquid interfaces. [228][229][230][231][232] Such polarizable continuum-based schemes can also mitigate another critical challenge for realistic simulations of electrode-electrolyte interfaces and catalytic redox electrochemistry-namely, the application of a well-defined voltage bias or photo-bias. Typically, there are two complications associated with an external bias within DFT: first, charge neutrality considerations that prevent accurate determination of a potential reference for a charged system that can be directly compared with experiments; and second, fundamental incompatibilities with the periodic boundary conditions generally employed for simulations of extended crystalline systems.…”
Section: Dft and Ground-state Techniquesmentioning
confidence: 99%