2003
DOI: 10.1103/physrevb.67.155321
|View full text |Cite
|
Sign up to set email alerts
|

Implementing the Keldysh formalism intoab initiomethods for the calculation of quantum transport: Application to metallic nanocontacts

Abstract: We discuss the key steps that have to be followed to calculate quantum transport out of equilibrium by means of the ab initio Gaussian embedded-cluster method recently developed by the authors. Our main aim is to emphasize that, if a sufficiently large portion of the electrodes is included in the ab initio calculation, there is no need to impose an electrostatic potential V drop across the system. The electrochemical-potential difference L Ϫ R ϭeV ͑where L and R are the electrochemical potentials well into the… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

2
71
0

Year Published

2005
2005
2022
2022

Publication Types

Select...
9
1

Relationship

5
5

Authors

Journals

citations
Cited by 79 publications
(73 citation statements)
references
References 16 publications
2
71
0
Order By: Relevance
“…[19]. It is noted that the two results are remarkably similar, as expected whenever the bias voltage is not very large [20]. This supports the validity of the comparison of the transmission T (E) with the experimental results associating the external applied field to the variable E. In figure 2 we note that, increasing the density of states, the Fano antiresonance becomes wider and dipper and shifts to higher voltages.…”
supporting
confidence: 82%
“…[19]. It is noted that the two results are remarkably similar, as expected whenever the bias voltage is not very large [20]. This supports the validity of the comparison of the transmission T (E) with the experimental results associating the external applied field to the variable E. In figure 2 we note that, increasing the density of states, the Fano antiresonance becomes wider and dipper and shifts to higher voltages.…”
supporting
confidence: 82%
“…Contour integration and sparse matrix techniques, together with parallelization over both k points and real space is exploited for optimal efficiency. Although the basic elements of our implementation are not new and have been described in earlier papers, [27][28][29][30] the possibility of applying a general gate and/or finite bias voltage, the use of multiple leads, and inclusion of nonequilibrium forces on the ions provides a flexible and efficient computational platform for general purpose modeling of charge transport at the nanoscale and should be of interest to a large and growing community. This paper is organized as follows.…”
Section: Introductionmentioning
confidence: 99%
“…The results depicted in Fig. 2 are addressed to identify the origin of the emergence of the Kondo resonance upon distortion of the molecule [18,19,20]. The Figure shows results for either the Co atom ( Fig.…”
mentioning
confidence: 99%