Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching

Tang, Aihua; Xu, Teng; Liu, Shengsheng; Liang, Yuhan; Chen, Hetian; Yan, Dayu; Shi, Youguo; Yu, Pu; Yu, Rong; Lin, Yucong; Nan, Tianxiang; Jiang, Wanjun; Yi, Di

doi:10.1002/aelm.202200514

Cited by 6 publications

(6 citation statements)

References 48 publications

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“…5), we estimated the 𝜉𝜉 !,%$ ranging from 0.012 to 0.027. This 𝜉𝜉 !,%$ is comparable to the spin-torque efficiency in our SrRuO3 and those reported by others 42,52 , which demonstrates a strong MST in the tri-layers with multiferroic BiFeO3 exceeding 100 nm. Having established the MST-induced magnetization switching, we proceed to investigate the in-situ voltage control of magnon transport in the proposed MMST device (Fig.…”

supporting

confidence: 89%

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Nan,

Chai,

Liang

et al. 2023

Preprint

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In-memory computing, utilizing non-volatile memories capable of performing both information storage and logic operations within the same device, holds the promise for empowering artificial intelligence (AI) with significantly reduced energy consumption. Existing logic-in-memory devices that have been implemented operate mainly based on charge transport, a process that inevitably gives rise to heat dissipation. On the other hand, magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal heat dissipation. However, it remains challenging to develop a magnon-based logic-in-memory device mainly due to the lack of efficient approach for electrical manipulation of magnon transport. Here we present a multiferroic magnon spin-torque (MMST) device that uses magnons as information carriers, in which the antiferromagnetic magnon modes can be electrically excited and controlled by the ferroelectric polarization in a multiferroic bismuth ferrite (BiFeO3) thin film with magnetoelectrically coupled antiferromagnetic and ferroelectric orders. In MMST that consists of multiple multiferroic/ferromagnet memory cells positioned along a spin-current channel, information can be written to magnetic bits in parallel by the magnon-mediated spin torque. We show that the ferroelectric polarization can electrically modulate the magnon spin-torque by controlling the non-collinear antiferromagnetic structure. We further demonstrate reconfigurable logic-in-memory operations in single MMST device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.

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supporting

confidence: 89%

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Nan,

Chai,

Liang

et al. 2023

Preprint

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“…5 ). We estimate a switching current density in SrRuO 3 about (3.05 ± 0.04) × 10 6 A/cm 2 by a parallel resistance model (see Supplementary Note 5 ), which is comparable to that of the heavy metal/ferromagnetic metal system 49 and SrRuO 3 -based heterostructures 50 , 51 . The linear dependence 52 of the threshold switching current on H x plotted in Fig.…”

Section: Resultsmentioning

confidence: 57%

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Chai,

Liang,

Xiao

et al. 2024

Nat Commun

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Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables—ferroelectric polarization and magnetization—we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.

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“…Second, SrRuO 3 has been demonstrated to show a strong spin‐Hall effect with large intrinsic spin Hall conductivity and is essential for generating significant magnon‐mediated spin torque. [ 31–33 ]…”

Section: Resultsmentioning

confidence: 99%

“…Second, SrRuO 3 has been demonstrated to show a strong spin-Hall effect with large intrinsic spin Hall conductivity and is essential for generating significant magnon-mediated spin torque. [31][32][33] Figure 2a shows the layered structure of the sample. Epitaxial SrRuO 3 /BiFeO 3 heterostructures were deposited on The 𝜌-T curve also shows a kink around 150 K, corresponding to the paramagnetic-ferromagnetic phase transition of SrRuO 3 .…”

Section: Structure and Ferroelectricity Characterizationsmentioning

confidence: 99%

Observation of Magnon Spin Transport in BiFeO₃ Thin Films

Liang,

Jiang,

Chai

et al. 2023

Adv Funct Materials

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Magnon, a quanta of spin waves, can transport in magnetically ordered insulators without substantial heat dissipation. The recently demonstrated magnon‐mediated spin torque through antiferromagnetic insulators is regarded as a highly efficient approach for electrical manipulation of magnetization. To control the magnon transport in antiferromagnets, a very large magnetic field is required, since antiferromagnets show immunity to external magnetic disturbance. The antiferromagnetic order can be electrically controlled in multiferroic materials via the magnetoelectric coupling between the antiferromagnetic and ferroelectric orders. Here, we report the experimental observation of magnon spin transport through multiferroic BiFeO3 thin films in SrRuO3/BiFeO3/NiFe tri‐layers at room temperature. We find highly efficient magnon current transmission through BiFeO3 thin film with a thickness exceeding 80 nm by the spin pumping measurement. The magnon spin‐torque efficiency in the tri‐layers measured by the spin‐torque ferromagnetic resonance is comparable with that in the SrRuO3/NiFe bilayer. This results suggest multiferroic BiFeO3 to be an excellent platform for investigating the antiferromagnetic magnon transport and developing magnonic devices.

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Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching

Cited by 6 publications

References 48 publications

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Observation of Magnon Spin Transport in BiFeO₃ Thin Films

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Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching

Cited by 6 publications

References 48 publications

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Observation of Magnon Spin Transport in BiFeO3 Thin Films

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Observation of Magnon Spin Transport in BiFeO₃ Thin Films