2019
DOI: 10.1016/j.procs.2020.01.063
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Implementation Topology of Full Adder Cells

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Cited by 2 publications
(2 citation statements)
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“…Transistor scaling is vital to building low-power integrated circuit (IC). Transistors technologies as high-electron-mobility transistor (HEMT), heterojunction bipolar transistor (HBT), metal oxide semiconductor field effect transistor (MOSFET), and negative capacitance field effect transistor (NCFET) [4], [5] facilitate scaling to lower levels [6]. Other than typical full adder design techniques (using XOR/XNOR (or) CMOS inverters), there are some popular digital logics accessible, i.e., efficient charge recovery logic (ECRL), adiabatic logic, dual rail circuits (DRC), and reversible logic [7], [8].…”
Section: Introductionmentioning
confidence: 99%
“…Transistor scaling is vital to building low-power integrated circuit (IC). Transistors technologies as high-electron-mobility transistor (HEMT), heterojunction bipolar transistor (HBT), metal oxide semiconductor field effect transistor (MOSFET), and negative capacitance field effect transistor (NCFET) [4], [5] facilitate scaling to lower levels [6]. Other than typical full adder design techniques (using XOR/XNOR (or) CMOS inverters), there are some popular digital logics accessible, i.e., efficient charge recovery logic (ECRL), adiabatic logic, dual rail circuits (DRC), and reversible logic [7], [8].…”
Section: Introductionmentioning
confidence: 99%
“…For intelligent system applications, complementary metaloxide-semiconductor (CMOS) design topologies of 1-bit full adder (FA) were introduced in Rekib Uddin Ahmed and Prabir Saha 2019 [9]. However, the power consumption was not minimized by CMOS design topology.…”
mentioning
confidence: 99%