Implementation of the Thin-Slot Formalism in the Finite-Difference EMP Code THREDII

Gilbert, James L.; Holland, Robert C.

doi:10.1109/tns.1981.4335711

Cited by 85 publications

(31 citation statements)

References 1 publication

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“…This can be compared to the pu slot capacitance as derived in Smythe (1989) and used in Gilbert and Holland (1981) …”

Section: Formulation Of the Thin-slot Algorithmmentioning

confidence: 99%

“…Furthermore, for the reasons mentioned in Gilbert and Holland (1981), the effective relative permeability of the slot must be also modified in accordance with…”

Section: Formulation Of the Thin-slot Algorithmmentioning

confidence: 99%

“…One of the first thin-slot algorithms was introduced in FDTD by Gilbert and Holland (1981) followed by Taflove et al (1988). Both algorithms were based on the integral representation of Maxwell's equations.…”

Section: Introductionmentioning

confidence: 99%

“…With the exception of the first two aforementioned methods, all other methods were relatively difficult to implement in FDTD. There is still need for a thin-slot model that is conceptually simple and, at the same time, more accurate than the model by Gilbert and Holland (1981). One such model is presented in the next section, along with two different implementations.…”

Section: Introductionmentioning

confidence: 99%

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Thin-Slot/Thin-Layer Subcell FDTD Algorithms for EM Penetration through Apertures

Gkatzianas

Tsiboukis

2003

Electromagnetics

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“…This can be compared to the pu slot capacitance as derived in Smythe (1989) and used in Gilbert and Holland (1981) …”

Section: Formulation Of the Thin-slot Algorithmmentioning

confidence: 99%

“…Furthermore, for the reasons mentioned in Gilbert and Holland (1981), the effective relative permeability of the slot must be also modified in accordance with…”

Section: Formulation Of the Thin-slot Algorithmmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thin-Slot/Thin-Layer Subcell FDTD Algorithms for EM Penetration through Apertures

Gkatzianas

Tsiboukis

2003

Electromagnetics

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“…Thin-slot formalism permits inclusion of conducting plates with arbitrarily narrow apertures or gaps without requiring any corresponding need to reduce the cell size to the gap width or depth for the FDTD analysis. Several Thin-slot formalisms have been proposed in the literature [18][19][20][21][22][23]. However, they are mostly for apertures having zero thickness, and when slots with finite thickness are involved, only the hybrid thin-slot algorithm (HTSA) can be effective [22].…”

Section: Introductionmentioning

confidence: 99%

A Simple Local Approximation FDTD Model of Short Apertures With a Finite Thickness

Xiong¹,

Chen²,

Mao³

et al. 2012

PIER

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Abstract-This paper brings forward a simple local approximation finite-difference time-domain (FDTD) method for the analysis of short apertures with a finite thickness. By applying the equivalence principle together with a simple local approximation, the varying field distribution is accurately derived. The updating equations for the slot field can be derived by casting the field distributions into the contour paths containing the apertures. The method has been applied to two problems and the results are compared with the high-resolution standard FDTD simulation results and the measurement results. The accuracy of the proposed method is verified from the comparison of both the field distribution and the time-domain and frequency-domain slot coupling results. It is demonstrated that the local approximation is highly efficient and timesaving, and the present method is stable, numerically and computationally efficient.

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Modeling and reduction of crosstalk on coupled microstrip line structures and multichip modules: An FDTD approach

Rizvi

LoVetri

1996

Int. J. Microw. Mill.-Wave Comput.-Aided Eng.

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The finite difference time domain modeling technique is used to model the near end and far end crosstalk on coupled microstrip structures used in multichip modules. The lines are terminated in lumped resistors which closely, but not exactly, match the lines. One line is excited by a Gaussian voltage pulse produced by a Thévenin equivalent voltage source. It is shown that adding dielectric strips in the substrate below the conducting lines will reduce the peak crosstalk by as much as 80%. Eight different configurations are modeled consisting of dielectric strips with different dielectric constant combinations. All configurations are modeled with and without a metal case in order to make sure that the crosstalk reduction persists when the structure is enclosed in a metallic enclosure (this would be the case for multichip modules). The results show that using dielectric strips with the smallest possible dielectric constant reduces crosstalk the most. © 1996 John Wiley & Sons, Inc.

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Implementation of the Thin-Slot Formalism in the Finite-Difference EMP Code THREDII

Cited by 85 publications

References 1 publication

Thin-Slot/Thin-Layer Subcell FDTD Algorithms for EM Penetration through Apertures

Thin-Slot/Thin-Layer Subcell FDTD Algorithms for EM Penetration through Apertures

A Simple Local Approximation FDTD Model of Short Apertures With a Finite Thickness

Modeling and reduction of crosstalk on coupled microstrip line structures and multichip modules: An FDTD approach

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