Implementation of Stable Nonvolatile Resistive Switching Behaviors in TiO₂ Nanoparticle‐Incorporated 2D Layered Halide Perovskite‐Based Devices

Abstract

2D organic‐inorganic layered halide perovskites have received tremendous interest as promising materials in electronics owing to their outstanding physical properties. However, the quantum confinement effect leads to the suppression of ion migration in the out‐of‐plane direction, restricting their applications in resistive switching (RS) memories with vertical structure. Here, we employed the 2D layered perovskite incorporated with TiO2 nanoparticles, denoted as TiO2‐PEA2PbBr4, as the functional layers to construct RS memory devices with Al/TiO2‐PEA2PbBr4/ITO structure. As compared to pure 2D layered perovskite counterparts without switching behaviors, the Al/TiO2‐PEA2PbBr4/ITO memories demonstrate stable bipolar RS behaviors, along with striking characteristics, including the relatively centralized set/reset voltages, a large on/off ratio (∼102), and a long retention time (104 s). In addition, the devices also present the multilevel storage capability by controlling the compliance current. Moreover, the RS behaviors are attributable to the formation/rupture of synergy bromine and oxygen vacancy conductive filaments (CFs), owing to their migration/distribution of oxygen/bromine ions under electric fields. The oxide nanoparticles incorporation route provides an effective strategy for improving RS performance in 2D layered perovskites‐based RS memories.This article is protected by copyright. All rights reserved.