Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization

Allgair, John A.; Benoit, David C.; Drew, Mark; Hershey, Robert R.; Litt, Lloyd C.; Herrera, Pedro; Whitney, Umar K.; Guevremont, Marco; Levy, Ady; Lakkapragada, Suresh

doi:10.1117/12.436771

Cited by 9 publications

(5 citation statements)

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“…(5) and (6) also establish the boundaries of possible effective dielectric response in the physical mixture of PR and free space. The validity of this theory is usually assumed when the characteristic sizes of ingredients are smaller than the wavelength of the probing beam [12].…”

Section: ∆(Degree)mentioning

confidence: 98%

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Rotating compensator spectroscopic ellipsometry for line-width control

et al. 2002

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Rotating compensator spectroscopic ellipsometry(RCSE) was applied to the characterization of linewidth in deep uv photoresist (PR) films. Variation of line-width in few nm was distinguishable by comparing the features in conventional ellipsometry parameter{∆, Ψ} or the degree of polarization spectra obtainable from RCSE. The variations in the former spectra were caused by the density change in patterned PR films. Meanwhile, the variations in latter spectra were caused by the surface profile of the film. Once the spectral positions of the features were related to the results of CD-SEM, both spectra could be used to estimate the line-width of patterned PR without in depth analysis. Further, when uniaxial anisotropy was assumed for the film, the line-width could be roughly deduced in the process of extracting the optical properties of film via an effective medium approximation.

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Section: ∆(Degree)mentioning

confidence: 98%

“…However, its sensitivity drops due to the loss of high diffraction orders when the pitchto-wavelength ratio becomes small. Also another optical technique, ellipsometry, has been used for the characterization of CD with data library for comparison [5].…”

Section: Introductionmentioning

confidence: 99%

Rotating compensator spectroscopic ellipsometry for line-width control

et al. 2002

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“…However, its sensitivity drops due to the loss of high diffraction orders when the pitch-to-wavelength ratio becomes small. Also another optical technique, ellipsometry, has been used for the characterization of CD with data library for comparison [5]. In present research, we…”

Section: Introductionmentioning

confidence: 99%

The characterization of line-width in mask using spectrophotometry

et al. 2006

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ABSTACTSpectrophotometry has been applied to the characterization of pattered mask line-width. Variations in the line-width by few nanometers can be distinguished by comparing spectrum profiles of reflectance or transmittance in spectrophotometry. It can be theoretically explained that the variations in the spectrum profiles are caused by CD bias of the patterned film. Experimental results also show that the positions of the spectrums along wavelength axis are related to the CD bias measured under CD-SEM. As a result, both spectra could be used to estimate quickly the line-width of patterned mask without in-depth analysis.

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“…In the library method, measured spectra are matched against theoretical spectra. The best match between the measured and theoretical spectra determines the parameter values that best describe the grating [2]. The second method was CDExpress (CDX ® ) with fixed pitch (3 floated parameters: CD, SWA, and Height).…”

Section: Introductionmentioning

confidence: 99%

Proximity matching for 193 nm scanner using scatterometry

Zhou¹,

Yu²,

Lo³

et al. 2005

Optical Microlithography XVIII

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In this paper, we evaluate several approaches for proximity matching on a 193nm scanner system such as image contrast tuning, illumination tuning and photoresist tuning. Both experimental and simulation studies are carried out to reveal the differences between approaches. We find that it is very important to determine the root cause of proximity mismatch before attempting proximity matching, and that spectroscopic scatterometry is an excellent tool for OPC tuning.

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Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization

Cited by 9 publications

References 0 publications

Rotating compensator spectroscopic ellipsometry for line-width control

Rotating compensator spectroscopic ellipsometry for line-width control

The characterization of line-width in mask using spectrophotometry

Proximity matching for 193 nm scanner using scatterometry

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