Abstract:In recent years, multi-level cell (MLC) flash memories have been developed as an effective solution for increasing the storage density and reducing the cost of flash memories. MLC flash memories are especially for NAND flash memories . Error control coding (ECC) is essential for correcting errors in Flash memories.In order to correct multiple random errors and burst errors, an efficient decoding algorithms are required.In this work (255, 231) Product Reed-Solomon (RS) code technique for non-volatile NAND flash… Show more
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