Implementation of Automatic Differentiation to Python-based Semiconductor Device Simulator

Ikegami, Tsutomu; Fukuda, Koichi; Hattori, Junichi

doi:10.1109/sispad.2019.8870377

Cited by 6 publications

(17 citation statements)

References 23 publications

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“…The hysteresis in the charge due to the polarization is apparent in the figure . As a test of the accuracy of our approach, we repeated the simulations with derivative terms with respect to en2, en3 set to 0. This emulates the condition in GPDE simulators which evaluate vector effects over all adjacent nodes, but may restrict their derivative information on edges [4], [14]. Fig.…”

Section: A Ferrocapacitor Simulationmentioning

confidence: 99%

“…Generalized PDE (GPDE) simulators use an equation description as input from the user [4], [6], [14], [17], [18]. The goal is to allow the rapid development of new models and applications for the continuum based approach.…”

Section: Introductionmentioning

confidence: 99%

“…Some may provide problem specific operators, limiting the general purpose nature of their approach. One group compared 3 TCAD simulation approaches to model the ferroelectric capacitance effect [14]. They report better convergence for methods where more complete model sensitivities are considered, such as ensuring that the electric field is fully coupled with the field dependent polarization model.…”

Section: Introductionmentioning

confidence: 99%

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Element Edge Based Discretization for TCAD Device Simulation

Sanchez¹,

Chen²

2021

Preprint

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<div>Technology computer-aided design (TCAD) semiconductor device simulators solve partial differential equations (PDE) using the finite volume method (FVM), or related methods. While this approach has been in use over several decades, its methods continue to be extended, and are still applicable for investigating novel devices. In this paper, we present an element edge based (EEB) FVM discretization approach suitable for capturing vector-field effects. Drawing from a 2D approach in the literature, we have extended this method to 3D. We implemented this method in a TCAD semiconductor device simulator, which uses a generalized PDE (GPDE) approach to simulate devices with the FVM. We describe how our EEB method is compatible with the GPDE approach, allowing the modeling of vector effects using scripting. As an example, this method is applied to solve polarization effects in ferroelectric materials, with examples of a 3D ferro capacitor and a 2D ferroelectric field-effect transistor.</div>

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Section: A Ferrocapacitor Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Element Edge Based Discretization for TCAD Device Simulation

Sanchez¹,

Chen²

2021

Preprint

View full text Add to dashboard Cite

show abstract

“…The hysteresis in the charge due to the polarization is apparent in the figure . As a test of the accuracy of our approach, we repeated the simulations with derivative terms with respect to nodes en2, en3 set to 0. This emulates the condition in GPDE simulators which evaluate vector effects over all adjacent nodes, but may restrict their derivative information on edges [4], [14]. The primary convergence criteria in our simulator is relative error, which is calculated at each node i as:…”

Section: A Ferrocapacitor Simulationmentioning

confidence: 99%

“…Some provide problem specific operators, limiting the general purpose nature of their approach. One group compared 3 TCAD simulation approaches to model the ferroelectric capacitance effect [14]. They report better convergence for methods where more complete model sensitivities are considered, such as ensuring that the electric field is fully coupled with the field dependent polarization model.…”

Section: Introductionmentioning

confidence: 99%

Element Edge Based Discretization for TCAD Device Simulation

Sanchez¹,

Chen²

2021

Preprint

View full text Add to dashboard Cite

<div><div><div><p>Technology computer-aided design (TCAD) semiconductor device simulators solve partial differential equations (PDE) using the finite volume method (FVM), or related methods. While this approach has been in use over several decades, its methods continue to be extended, and are still applicable for investigating novel devices. In this paper, we present an element edge based (EEB) FVM discretization approach suitable for capturing vector-field effects. Drawing from a 2D approach in the literature, we have extended this method to 3D. We implemented this method in a TCAD semiconductor device simulator, which uses a generalized PDE (GPDE) approach to simulate de- vices with the FVM. We describe how our EEB method is compatible with the GPDE approach, allowing the modeling of vector effects using scripting. This method is applied to solve polarization effects in a 3D ferro capacitor, and a 2D ferroelectric field-effect transistor. An example for field- dependent mobility in a 3D MOSFET is also presented.</p></div></div></div>

show abstract

Element Edge Based Discretization for TCAD Device Simulation

Sanchez¹,

Chen

2021

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Technology computer-aided design (TCAD) semiconductor device simulators solve partial differential equations (PDE) using the finite volume method (FVM), or related methods. While this approach has been in use over several decades, its methods continue to be extended, and are still applicable for investigating novel devices. In this paper, we present an element edge based (EEB) FVM discretization approach suitable for capturing vector-field effects. Drawing from a 2D approach in the literature, we have extended this method to 3D. We implemented this method in a TCAD semiconductor device simulator, which uses a generalized PDE (GPDE) approach to simulate devices with the FVM. We describe how our EEB method is compatible with the GPDE approach, allowing the modeling of vector effects using scripting. This method is applied to solve polarization effects in a 3D ferro capacitor, and a 2D ferroelectric field-effect transistor. An example for fielddependent mobility in a 3D MOSFET is also presented.

show abstract

Implementation of Automatic Differentiation to Python-based Semiconductor Device Simulator

Cited by 6 publications

References 23 publications

Element Edge Based Discretization for TCAD Device Simulation

Element Edge Based Discretization for TCAD Device Simulation

Element Edge Based Discretization for TCAD Device Simulation

Element Edge Based Discretization for TCAD Device Simulation

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