Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification

Ryu, Hojeong; Kim, Sungjun

doi:10.1016/j.chaos.2021.111223

Cited by 46 publications

(32 citation statements)

References 43 publications

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“…On the other hand, the use of a reactive-type metal with oxygen such as TiN and TaN results in the formation of an interfacial layer between the metal and the insulating layer, which can improve the resistive switching properties [8][9][10][11]. For the insulating layer acting as resistive switching, a lot of materials could be used.…”

Section: Introductionmentioning

confidence: 99%

Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell

Park

Lee

et al. 2021

Metals

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In this work, we fabricated a Pt/SiN/TaN memristor device and characterized its resistive switching by controlling the compliance current and switching polarity. The chemical and material properties of SiN and TaN were investigated by X-ray photoelectron spectroscopy. Compared with the case of a high compliance current (5 mA), the resistive switching was more gradual in the set and reset processes when a low compliance current (1 mA) was applied by DC sweep and pulse train. In particular, low-power resistive switching was demonstrated in the first reset process, and was achieved by employing the negative differential resistance effect. Furthermore, conductance quantization was observed in the reset process upon decreasing the DC sweep speed. These results have the potential for multilevel cell (MLC) operation. Additionally, the conduction mechanism of the memristor device was investigated by I-V fitting.

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Section: Introductionmentioning

confidence: 99%

Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell

Park

Lee

et al. 2021

Metals

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“…S7 †). 45,46 It is worth mentioning that this relaxation time is significantly shorter than those reported from other bulk thin film-based memristors, 17,19,21 thanks to the high Ag atom mobility offered by the unique 3D structure. Such shortened relaxation time is beneficial for enabling fast computing and processing.…”

Section: Resistive Switching Of the Tin/msio 2 /Ag Memristormentioning

confidence: 86%

3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing

et al. 2022

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“…It has tremendous reactivity when reacting with oxygen and oxidizes to TaON [28]. The formation of this interfacial layer can help resistive switching characteristics [29,30].…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System

Pyo

Kim

2022

Nanomaterials

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We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a TaN layer using an oxygen-reactive radio frequency (RF) sputtering system. The bi-layer formation of ZnO and TaON interferes with the filament rupture after the forming process and then raises the current level slightly. The current levels were divided into high- and low-compliance modes. The retention, endurance, and pulse conductance were verified with a neuromorphic device. This device was stable and less consumed when it was in low mode rather than high mode.

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Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification

Cited by 46 publications

References 43 publications

Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell

Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cell

3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing

Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System

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