Implanted gallium-ion concentrations of focused-ion-beam prepared cross sections

Ishitani, Tohru

doi:10.1116/1.590106

Cited by 42 publications

(29 citation statements)

References 7 publications

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“…Typical I±V characteristics for implanted Ga contacts and thermally deposited Al and Ti contacts. Inset shows temperature dependence of n D of n-type diamond measured using Ga and Al contacts which is consistent with the result by experiments [27] and Monte Carlo calculation [28]. The increase in O KLL intensity may originate from the oxidation of Ga atoms.…”

Section: Implanted Ga Contactssupporting

confidence: 77%

Ohmic Contacts for Phosphorus-Doped n-Type Diamond

Teraji

Koizumi

Kanda

2000

phys. stat. sol. (a)

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Electric contacts for phosphorus (P)-doped n-type diamond films have been studied. The P-doped {111} homoepitaxial diamond thin films with n-type conduction are grown on high temperature high pressure diamond substrates by microwave-enhanced plasma chemical vapor deposition. The donor density and crystallinity of the phosphorus-doped diamond films were varied depending on the growth conditions. Metals with different work function and different reactivity to diamond films were deposited on the P-doped diamond films as electrodes. Ion implantation was also applied for introducing electrically active defects in diamond films. We found that n-type rectification properties with average Schottky barrier height of 2.4 eV were obtained from both Au and Cu contacts deposited on lightly doped diamond films with donor density N D of 5 Â 10 17 cm ±3 . Ohmic properties were obtained from electrodes on heavily doped layer with N D of over 1 Â 10 19 cm ±3 . Electrodes formed on the diamond film with electrically active defects also show Ohmic properties. These features indicate that the behavior of contacts formed on P-doped n-type diamond films is similar to those on typical n-type semiconductors.

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Section: Implanted Ga Contactssupporting

confidence: 77%

Ohmic Contacts for Phosphorus-Doped n-Type Diamond

Teraji

Koizumi

Kanda

2000

phys. stat. sol. (a)

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“…Another well studied FIB induced artifact is the implantation of Ga + ions (Cairney et al, 2000b;Ishitani et al, 1998;Reiner et al, 2004;Rubanov and Munroe, Fig. 4.…”

Section: The Fib-sample Interaction Effectsmentioning

confidence: 98%

“…The FIB induced artifacts are described as morphological defects, crystal damage, uncontrolled Ga + implantation, amorphization, material redeposition, mixing of material, radiation damage, changes in surface geometry, and its electronic properties, etc. (Adams, 2006;Barber, 1993;Barna et al, 1999;Bever et al, 1992;Boxleitner et al, 2001;Brezna et al, 2003;Cairney and Munroe, 2003;Frey et al, 2003;Huang, 2004;Inkson et al, 2006;Ishitani et al, 1998Ishitani et al, , 2004McCaffrey et al, 2001;Nord et al, 2002;Perrey et al, 2004;Rajsiri et al, 2002;Reiner et al, 2004;Rubanov and Munroe, 2003Stanishevsky et al, 2002;Vetterli et al, 1995;Wang et al, 2005;Yabuuchi et al, 2004;Yu et al, 2006).…”

Section: Introductionmentioning

confidence: 96%

Surface damage induced by FIB milling and imaging of biological samples is controllable

Drobne

Milani

Lešer

et al. 2007

Microscopy Res & Technique

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Focused ion beam (FIB) techniques are among the most important tools for the nanostructuring of surfaces. We used the FIB/SEM (scanning electron microscope) for milling and imaging of digestive gland cells. The aim of our study was to document the interactions of FIB with the surface of the biological sample during FIB investigation, to identify the classes of artifacts, and to test procedures that could induce the quality of FIB milled sections by reducing the artifacts. The digestive gland cells were prepared for conventional SEM. During FIB/SEM operation we induced and enhanced artifacts. The results show that FIB operation on biological tissue affected the area of the sample where ion beam was rastering. We describe the FIB-induced surface major artifacts as a melting-like effect, sweating-like effect, morphological deformations, and gallium (Ga(+)) implantation. The FIB induced surface artifacts caused by incident Ga(+) ions were reduced by the application of a protective platinum strip on the surface exposed to the beam and by a suitable selection of operation protocol. We recommend the same sample preparation methods, FIB protocol for milling and imaging to be used also for other biological samples.

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“…Very few reports are focused, however, on understanding the basic ion beam/material interactions that occur when a highly energetic focused Ga C beam is rastered across the surface of a material. 20,21 As the scale of materials drop into the nanometer range, it will become necessary to understand the surface changes that occur due to FIB milling, so that these artifacts may be accounted for during subsequent characterization. Until now, TEM has been the only technique used to determine the structural changes and thickness of the damaged layer caused by FIB sputtering with a Ga C beam, whereas TEM with energy-dispersive x-ray spectrometry (EDS) has been exploited to study the Ga implantation rate.…”

Section: Introductionmentioning

confidence: 99%

XPS analysis of FIB‐milled Si

Ferryman

Fulghum

Giannuzzi

et al. 2002

Surface & Interface Analysis

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The development of focused ion beam (FIB) workstations with beam sizes <10 nm in diameter has initiated a revolution in the modification and characterization of materials on a nanoscale. Focused ion beams are now widely used to obtain site-specific specimens for scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses, but are being utilized also in connection with Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS). In order to understand the structure/property relationships of new materials, it is imperative that nano-characterization techniques with site-specific precision be available. In this work, x-ray photoelectron spectroscopy and imaging are used to study the surface changes that occur due to FIB milling of Si(100). The FIB-prepared specimen was analyzed 'as received' and after the specimen was stored at room temperature and in the atmosphere for 5 months. The XPS images were acquired to determine the distribution of Si 4+ (SiO 2 ) and Ga contamination on the Si 0 surface. Small-area XPS spectra of the Si FIB specimen were collected to evaluate the changes in SiO 2 surface concentration. The XPS spectra were also extracted from areas ∼1 µm × 1 µm by exploiting the images-to-spectra approach to XPS analysis. This study demonstrates both the problems inherent in the analysis of small samples and the critical information that can be obtained from high spatial resolution XPS analysis. In this example, increased SiO 2 was observed in the 'aged' sample relative to the 'as-received' sample, and non-uniform Ga contamination was detected.

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Implanted gallium-ion concentrations of focused-ion-beam prepared cross sections

Cited by 42 publications

References 7 publications

Ohmic Contacts for Phosphorus-Doped n-Type Diamond

Ohmic Contacts for Phosphorus-Doped n-Type Diamond

Surface damage induced by FIB milling and imaging of biological samples is controllable

XPS analysis of FIB‐milled Si

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