Implantation of cobalt in SnO2 thin films studied by TDPAC

Schell, Juliana; Carbonari, A. W.; Mansano, Ronaldo Domingues; Dang, Thien Thanh; Vianden, R.

doi:10.1063/1.4983270

Cited by 4 publications

(4 citation statements)

References 19 publications

(16 reference statements)

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“…In addition, attractive defect-defect interactions may lead to the clustering of defects, even in diluted samples. TDPAC studies can play a key role in elucidating these effects in detail [52] (including defects caused by implantation [53,54]), especially if they are performed in association with self-diffusion studies [55,56].…”

Section: Discussionmentioning

confidence: 99%

TDPAC Studies of Local Defects and Phenomena in Ferroics and Multiferroics

Schell

Marschick

2019

Crystals

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We provide an overview of time-differential perturbed angular correlation (TDPAC) measurements of ferroic and multiferroic materials. Here, we explore chalcogenide spinels, lead titanate, lead zirconate, and bismuth ferrite, describing the use of TDPAC experiments to probe the physics of localized defects and the various mechanisms that govern electronic and magnetic interactions, the coupling of the associated degrees of freedom, and the structural, charge, and orbital correlations for these materials.

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Section: Discussionmentioning

confidence: 99%

TDPAC Studies of Local Defects and Phenomena in Ferroics and Multiferroics

Schell

Marschick

2019

Crystals

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“…Due to the variable oxidation states and oxygen vacancy defects, tin oxides have versatile applications in various fields (Anu & Savitha Pillai, 2022). Tin oxides are widely used as semiconductor materials in diodes, transistors, solar cells, LEDs, gas sensors, capacitors, photocatalytic, optoelectronic devices, and many other electronic devices (Schell et al, 2017;Doyan et al, 2021).…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Stannic Oxide (SnO2) Thin Film

Özmenteş

2024

Yüzüncü Yıl Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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SnO2 (stannik oksit) ince filmler, kalay(IV) klorür çözeltisinin basit bir sprey kaplama cihazı ile 400°C altlık sıcaklığında mikroskop lam altlığı üzerine atomize edilmesiyle hazırlandı. Numuneler UV-Vis, XRD, SEM ve EDS spektroskopik teknikleri ile optiksel, yapısal, morfolojik ve bileşimsel olarak incelenmiştir. Optiksel analiz, sentezlenen filmlerin yüksek geçirgenliğe sahip olduğunu ve bant aralığı Eg değerinin 3.88 eV olduğunu gösterdi. XRD çalışmaları, filmlerin amorf olduğunu ve gözlenen tek kırınım tepe noktasının metalik kalay (Sn) elementine ait olduğunu belirlemiştir. SEM mikrografları, substrat yüzeyindeki mikro taneciklerin birikmesi sonucu pürüzlü bir yüzey gösterirken, EDX analizi, biriken ince filmlerin stokiyometrik olmayan yapısını gösterdi

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“…The tin oxide (SnO2) is a semiconductor material that has high optical transparency and low resistivity . In addition, tin oxide has an energy band gap ranging from 3.6 eV (Schell et al, 2017). Because of its uniqueness, tin oxide is widely applied to capacitors, transistors, diodes, and sensors (Doyan et al, 2018).…”

Section: Introductionmentioning

confidence: 99%

Growth of Tin Oxide Thin Film by Aluminum and Fluorine Doping Using Spin Coating Sol-Gel Techniques

Susilawati¹,

Doyan

Muliyadi

et al. 2020

jppipa, pendidikan ipa, fisika, biologi, kimia

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The growth of tin oxide thin film by Aluminum doping and Fluorine has been carried out with the sol-gel spin coating technique. The growth aims to determine the quality of the thin layer formed based on variations in doping aluminum and fluorine. The basic ingredients used were SnCl2.2H2O, while the doping materials used were Al (Aluminium) and F (Fluorine) with variations in dopant concentrations (0, 5, 10, 15, 20 and 25)%. The growth of a thin layer using measured glass (10x10x 3) mm as a substrate. The growth of thin films includes substrate preparation, sol-gel making, thin film making, and heating processes. The growth of thin layer was dripped on a glass substrate with sol-gel spin coating technique at 1 M sol concentration and treated with maturation for 24 hours. The next step is making a thin layer using a spin coater at a speed of 2000 rpm for 3 minutes. After that, the substrate is heated in an oven at 100°C for 60 minutes. The results showed that the transparency level of the tin oxide layer increases with increasing amounts of doping Aluminum and fluorine. Key words: Aluminum, Fluorine, Sol-gel, Spin Coating, Thin Film, Tin Oxide

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Implantation of cobalt in SnO2 thin films studied by TDPAC

Cited by 4 publications

References 19 publications

TDPAC Studies of Local Defects and Phenomena in Ferroics and Multiferroics

TDPAC Studies of Local Defects and Phenomena in Ferroics and Multiferroics

Synthesis and Characterization of Stannic Oxide (SnO2) Thin Film

Growth of Tin Oxide Thin Film by Aluminum and Fluorine Doping Using Spin Coating Sol-Gel Techniques

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