Implantation of bubble garnets

Gérard, P.

doi:10.1016/0040-6090(84)90334-1

Cited by 32 publications

(5 citation statements)

References 65 publications

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“…GGG can be grown in such a way as to provide excellent single-crystalline quality. Garnets were intensively studied in the 1980s with the aim of developing magnetic bubble devices [1][2][3][4]. Later on, ion implantation was used for doping garnets with various ions to prepare laser materials [5].…”

Section: Introductionmentioning

confidence: 99%

Iron implantation in gadolinium gallium garnet studied by conversion-electron Mössbauer spectroscopy

Szücs

Dézsi

Fetzer

et al. 1998

J. Phys.: Condens. Matter

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Gadolinium gallium garnet single crystals were implanted with doses of ions in the range . Depending on the dose, iron with or charge states was found to have formed after the implantation. After a subsequent annealing in air, the iron oxidized to . The Mössbauer and channelling measurements showed lattice recrystallization taking place at . After recrystallization, the iron was found to have substituted for gallium ions both at the octahedral and at the tetrahedral positions. The relative concentration of the two types of iron at the two sites shifted towards the equilibrium distribution upon high-temperature annealing.

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Section: Introductionmentioning

confidence: 99%

Iron implantation in gadolinium gallium garnet studied by conversion-electron Mössbauer spectroscopy

Szücs

Dézsi

Fetzer

et al. 1998

J. Phys.: Condens. Matter

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“…For the unimplanted sublayer, with perpendicular magnetic anisotropy, only the term related to the m ui z component should be considered. However, for the implanted sublayer, where the magnetization lies in the film plane [6,7], both the m i z and an in-plane magnetization component should be taken into account. It has been proved, after the tests performed, that the model can be fitted to the I 2ω (H, φ) measured dependences for the m i y , in addition to the m i z component.…”

Section: Solid State Phenomena 233-234mentioning

confidence: 99%

“…A perfect example of such a system is epitaxial garnet film subjected to implantation with low ion dose, enough to reorient the magnetization direction in the implanted sublayer of the garnet film. In the implanted volume of the film, due to implantation, large changes in uniaxial anisotropy are induced as a result of radiation defects associated with coherent strain in the crystal structure [6]. Moreover, the chemical activity of implanted ions along the implantation depth can influence the film properties [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…In the implanted volume of the film, due to implantation, large changes in uniaxial anisotropy are induced as a result of radiation defects associated with coherent strain in the crystal structure [6]. Moreover, the chemical activity of implanted ions along the implantation depth can influence the film properties [6,7]. The MSHG I 2ω (H, φ) intensities were measured as a function of the perpendicular magnetic field H ⊥ at selected azimuths φ of relative sample crystallographic axes orientation with respect to the light polarization plane.…”

Section: Introductionmentioning

confidence: 99%

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Magnetization Processes Study in the Implanted Garnet Films Using the Second-Harmonic Generation Effect

Bonda

Uba

2015

SSP

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In the work, magnetization-induced second-harmonic generation (MSHG) effect has been appliedto investigate the magnetization distribution changes, induced by ion implantation into thethin surface layer of garnet film.The studies were performed on the (111)-orientedepitaxial garnet film (YSmLuCa)$_3$(FeGa)$_5$O$_{12}$ implanted with $1.5\times10^{16}$~cm$^{-2}$dose of H$_2^+$ ions at $60$~keV energy. The measurements of the MSHG effectwere performed as a function of amplitude of perpendicular external magnetic field. The observed complex field dependencesof the remagnetization processes for the implanted garnet film studied were described in theframe of a phenomenological model developed. The model of the MSHG effect allows to performdecomposition of measured dependences on separate contributions originating from magnetizationcomponents related to implanted and unimplanted film volumes.

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“…[4][5][6][7][8][9][10][11][12][13] These properties of YIG can be tuned further by changing the elemental composition, doping, epitaxial orientation, stress engineering and other manipulations. 6,[14][15][16][17][18][19][20] Since for many applications, YIG is required in a thin film form, the growth of high quality epitaxial films of this material has emerged as a major field of research. It is now well established that gadoliniumgallium-garnet (GGG) [space group Ia3 ̅ d(O h 10 ), lattice parameter = 1.2383 nm] is the best substrate for growth of epitaxial YIG films.…”

Section: Introductionmentioning

confidence: 99%

Effects of post-deposition annealing on the structure and magnetization of PLD grown yttrium iron garnet films

Kumar

Hossain

Budhani

2017

Journal of Applied Physics

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We report on the recrystallization of 200 nm thick as-grown Yttrium Iron Garnet ( Y 3.4 Fe 4.6 O 12 ) films on (111) face of Gadolinium Gallium Garnet (GGG) single crystals by post-deposition annealing. Epitaxial conversion of the as-grown microcrystalline YIG films was seen after annealing at 800 o C for more than 30 minutes both in ambient oxygen as well as in air. The as-grown oxygen annealed samples at 800 o C for 60 minutes crystallize epitaxially and show excellent figure-of-merit for saturation magnetization (MS = 3.3 μB/f.u., comparable to bulk value) and coercivity (HC ~ 1.1 Oe). The ambient air annealing at 800 o C with a very slow rate of cooling (2 o C/min) results in a double layer structure with a thicker unstrained epitaxial top layer having the MS and HC of 2.9 μB/f.u. and 0.12 Oe respectively. The symmetric and asymmetric Reciprocal space maps of both the samples reveal a locking of the in-plane lattice of the film to the in-plane lattice of substrate, indicating a pseudomorphic growth. The residual stress calculated by sin 2 ψ technique is compressive in nature. The lower layer in air annealed sample is highly strained, whereas, the top layer has negligible compressive stress.

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Implantation of bubble garnets

Cited by 32 publications

References 65 publications

Iron implantation in gadolinium gallium garnet studied by conversion-electron Mössbauer spectroscopy

Iron implantation in gadolinium gallium garnet studied by conversion-electron Mössbauer spectroscopy

Magnetization Processes Study in the Implanted Garnet Films Using the Second-Harmonic Generation Effect

Effects of post-deposition annealing on the structure and magnetization of PLD grown yttrium iron garnet films

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