Implantation model for plasma ion irradiation of a sheath bounded surface

Ordonez, C. A.; Booth, William D.; Carrera, R.; Oakes, M. E.

doi:10.1080/10420159108221344

Radiation Effects and Defects in Solids

1991

DOI: 10.1080/10420159108221344

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Implantation model for plasma ion irradiation of a sheath bounded surface

C. A. Ordonez¹,

William D. Booth²,

R. Carrera³

et al.

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Cited by 2 publications

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“…) with i = x, y, or z. Equation (12) represents random components of the initial velocity vector sampled from a Maxwellian distribution[6,7], where R ji are all independent random numbers with a uniform distribution between zero and one. The initial conditions are obtained from the velocity vector v n0 = v n0,xx +v n0,yŷ +v n0,zẑ and position vector r n0 = R[ 1,1]x 3ŷ+0ẑ, wherex,ŷ, andẑ are Cartesian unit vectors and R[x 1 , x 2 ] is a random number with a uniform distribution between x 1 and x 2 .…”

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confidence: 99%

Artificially Structured Boundary for a high purity ion trap or ion source

Pacheco¹,

Ordonez²,

Weathers³

2014

Nuclear Instruments and Methods in Physics Research Section B:

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A plasma enclosed by an Artificially Structured Boundary (ASB) is proposed here as an alternative to existing ion source assemblies. In accelerator applications, many ion sources can have a limited lifetime or frequent service intervals due to sputtering and eventual degradation of the ion source assembly. Ions are accelerated towards the exit canal of positive ion sources, whereas, due to the biasing scheme, electrons or negative ions are accelerated towards the back of the ion source assembly. This can either adversely a↵ect the experiment in progress due to sputtered contamination or compromise the integrity of the ion source assembly. Charged particle trajectories in the proximity of an ASB experience electromagnetic fields that are designed to hinder ion-surface interactions. Away from the ASB there is an essentially field free region. The field produced by an ASB is considered to consist of a periodic sequence of electrostatically plugged magnetic field cusps. A classical trajectory Monte Carlo simulation is extended to include electrostatic plugging of magnetic field cusps. The conditions necessary for charged particles to be reflected by the ASB are presented and quantified in terms of normalized parameters.

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mentioning

confidence: 99%

Artificially Structured Boundary for a high purity ion trap or ion source

Pacheco¹,

Ordonez²,

Weathers³

2014

Nuclear Instruments and Methods in Physics Research Section B:

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Secondary electron emission at anode, cathode, and floating plasma-facing surfaces

Ordonez

Peterkin

1996

Journal of Applied Physics

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The secondary electron emission coefficient is evaluated for electron impact on anode, cathode, and electrically floating plasma-facing surfaces. Two energy and angle distribution functions for electron impact on a plasma-facing surface are derived and different relations for the secondary electron emission coefficient which functionally depend on energy and angle are integrated over the distributions. One integration is in closed form and provides a parametric expression for the secondary electron emission coefficient of a plasma-facing surface. The other integrations are carried out numerically. Evaluation of the secondary electron emission coefficient for a variety of commonly-used plasma-facing materials shows that its value is near or above unity over a significant range of plasma temperatures.

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Implantation model for plasma ion irradiation of a sheath bounded surface

Cited by 2 publications

References 8 publications

Artificially Structured Boundary for a high purity ion trap or ion source

Artificially Structured Boundary for a high purity ion trap or ion source

Secondary electron emission at anode, cathode, and floating plasma-facing surfaces

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