Implantation damage formation in a-, c- and m-plane GaN

Lorenz, K.; Wendler, E.; Redondo-Cubero, A.; Catarino, N.; Chauvat, Marie-Pierre; Schwaiger, Stephan; Scholz, F.; Alves, E.; Ruterana, P.

doi:10.1016/j.actamat.2016.10.020

Cited by 74 publications

(56 citation statements)

References 54 publications

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“…The narrowing of channel dips with normalised yield enhancement is mainly observed in m ‐plane ZnO (see Figure 1D). The figure shows the channel modification asymmetry for various ZnO orientations; a similar effect has been observed in GaN before 16,17 . The angular scans in Figure 1D indicate slight surface‐layer recovery in m ‐plane and c ‐plane ZnO.…”

Section: Resultssupporting

confidence: 65%

“…The figure shows the channel modification asymmetry for various ZnO orientations; a similar effect has been observed in GaN before. 16,17 The angular scans in Figure 1D indicate slight surface-layer recovery in m-plane and c-plane ZnO. The minimum yield was slightly decreased in c-plane ZnO (see the upper part of Figure 1D), and the angular scans were modified and broadened again after annealing in m-plane ZnO (see the bottom part of Figure 1D).…”

Section: Methodsmentioning

confidence: 97%

“…Single-crystal ZnO wafers (10 × 10 × 0.3 mm 3 ) with <0001>, <10-10> and <11-20> crystallographic orientations were purchased from the Crystal Company, Germany. The used samples with the surface along the crystallographic planes (0001), and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) are labelled as c-plane, m-plane and a-plane, respectively. Implantation Implantation damage is affected by ion-implantation fluence and increases with higher ion fluence for all orientations (see Figure 1A-C).…”

Section: Methodsmentioning

confidence: 99%

“…8,9,11 Projected ranges in various crystal orientations as well as the subsequent formation of extended defects can differ. 10 Radiation damage in the ZnO nonpolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane and (10-10) plane is worth studying in connection with noble metal incorporation even at high ionimplantation energies enabling the correlation of the ion-channelling effect to the structural modification of ZnO. Nonpolar ZnO surfaces do not suffer polarisation effect, deteriorating luminescence properties.…”

Section: Introductionmentioning

confidence: 99%

“…The paper presents a study of 5-MeV energy Au + ion implantation in polar c-plane (0001), nonpolar a-plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) wavelengths. Annealing has beneficial influence on near-band-edge (NBE) luminescence recovery, whereas deep-level-emission (DLE) luminesce has been shifted to lower wavelengths than appeared after implantation.…”

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confidence: 99%

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High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

Jágerová

Malínský

Mikšová

et al. 2020

Surface & Interface Analysis

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The paper presents a study of 5‐MeV energy Au+ ion implantation in polar c‐plane (0001), nonpolar a‐plane (11‐20) and m‐plane (10–10) ZnO crystallographic cuts using fluences of 5 × 1014 and 1 × 1015 cm−2. The implanted samples were subsequently annealed in O2 atmosphere at 600°C. It was shown that a‐plane ZnO exhibited a lowest level of Zn sublattice disorder evidenced by Rutherford backscattering spectroscopy in channelling mode (RBS‐C); in contrast, m‐plane ZnO showed the highest disorder. The disorder in the Zn sublattice grew progressively in the subsurface as well as in the implanted layer in c‐plane and m‐plane ZnO, while a‐plane has shown slight increase of disorder just in the implanted layer. Angular scans provided using RBS‐C have shown the preservation of channelling effect in the subsurface layer in a‐plane ZnO. On the contrary, the narrowed and shallow angular scan dips were seen in m‐plane ZnO. Raman spectroscopy has shown significant O‐sublattice disorder and O rearrangement mainly in a‐plane and m‐plane ZnO compared to c‐plane. After ion implantation, the exciton‐related luminescence band at 375 nm vanished almost completely, and the defect‐related band ‘shifted’ to shorter wavelengths. Annealing has beneficial influence on near‐band‐edge (NBE) luminescence recovery, whereas deep‐level‐emission (DLE) luminesce has been shifted to lower wavelengths than appeared after implantation.

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Section: Resultssupporting

confidence: 65%

Section: Methodsmentioning

confidence: 97%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

Jágerová

Malínský

Mikšová

et al. 2020

Surface & Interface Analysis

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Giant Piezoelectricity of Deformed Aluminum Nitride Stabilized through Noble Gas Interstitials for Energy Efficient Resonators

Fiedler

Fuchs

Leveneur

et al. 2021

Adv Elect Materials

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Aluminum nitride (AlN) is a material for a wide range of microwave‐frequency electronics devices, because of its piezoelectric properties and high chemical stability. To improve the performance of AlN‐based devices, such as acoustic wave filters and energy harvesters, an increased piezoelectric modulus is desirable. Here, an increase of the piezoelectric modulus d33 of this material is achieved by ion implantation of noble gases. For a fluence of 3 × 1016 at cm−2 Ar+, a 30% increase of d33 of AlN is obtained. The improvement is attributed to noble gas atoms implanted into interstitial sites of the wurtzite structure, causing a strong deformation of wurtzite AlN. Density functional theory calculations reveal the formation of deformed, metastable AlN with a 350% increase of the longitudinal piezoelectric coefficient. The ion implantation conditions to prepare AlN with a high piezoelectric coefficient are discussed and verified by X‐ray diffraction, Raman spectroscopy, and scanning transmission electron microscopy. Heavier elements, larger fluences, and an implantation angle not aligned to the wurtzite crystal are preferred since those conditions generate tetrahedrally coordinated interstitials. In contrast, the opposite conditions lead to octahedrally coordinated interstitials prior to relaxation, which activates the silent B1high phonon vibration and results in a reduced piezoelectric coefficient.

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Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au⁺ ions

Macková

Malínský

Jágerová

et al. 2018

Surface & Interface Analysis

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c‐plane (0001) and a‐plane (11‐20) gallium nitride (GaN) epitaxial layers were grown by Metal organic Vapour Phase epitaxy (MOVPE) on sapphire and subsequently implanted with 400‐keV and 5‐MeV Au+ ions using fluences 5 × 1014 to 5 × 1015 cm−2. The shallow Au depth profiling was accomplished by Rutherford backscattering spectrometry. The structural changes during implantation and subsequent annealing were characterised by Rutherford backscattering spectrometry channelling and Raman spectroscopy. The interplay between nuclear and electronic stopping, influencing defect accumulation, was monitored and discussed depending on GaN orientation. Post‐implantation annealing induced a structural reorganisation of the GaN structure depending on the ion‐implantation fluence, ion energy, and on the crystallographic orientation.

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Implantation damage formation in a-, c- and m-plane GaN

Cited by 74 publications

References 54 publications

High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

Giant Piezoelectricity of Deformed Aluminum Nitride Stabilized through Noble Gas Interstitials for Energy Efficient Resonators

Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au⁺ ions

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Implantation damage formation in a-, c- and m-plane GaN

Cited by 74 publications

References 54 publications

High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

Giant Piezoelectricity of Deformed Aluminum Nitride Stabilized through Noble Gas Interstitials for Energy Efficient Resonators

Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au+ ions

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Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au⁺ ions