Implantation damage and its effect on channelling

Transient enhanced diffusion during post-implant annealing of silicon

“….. ,Ci). (6) For exampie the totai number of defects shown in figure i is 100 and so a possible distribution in this case is…”

“…where SD(r) is a function of position only and represents the implantation dose required to reduce the crystalline volume density to l/e at this position. There is some evidence from channelling effect studies [6] that equation (37) gives a reasonable approximation for p,,. Most experimental work, however [7], shows that amorphization is characterized by an abrupt phase transition which occurs at each position for some critical dose SC(r).…”