Imperfections in amorphous chalcogenides. I. Electrically neutral defects in liquid sulfur and arsenic sulfides

Kawazoe, Hiroshi; Yanagita, Hiroaki; Watanabe, Yuichi; Yamane, Masayuki

doi:10.1103/physrevb.38.5661

Cited by 20 publications

(5 citation statements)

References 19 publications

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“…We find from the figure that A& is 0.64 eV. It is interesting to point out that in liquid As,& the defect creation energy measured with ESR in the temperature range from 360 to 600 'C is reported to he 0.61 kO.13 eV [3], which coincides well with that estimated here. Finally, we should mention the origin of the deep defect stales observed here.…”

Section: Discussionsupporting

confidence: 89%

“…This is in excellent agreement with the observed energy level in figure 4. Furthermore, as described above, the defect creation energy coincides well with that of the neutral As dangling bonds in liquid As,& [3]. We therefore conclude that the observed defect states originate in the neutral As dangling bonds.…”

Section: Discussionsupporting

confidence: 84%

“…A detailed derivation has been given by Oheda [I] and Schumm and Bauer [2]. Using a zero temperature approximation, the expression for the phase shift reduces to tan p ( w ) = ( o + nkTuug(E,))s, (3) and for the amplitude…”

Section: -~Unp(e)expc-(e-e)/k71 (2)mentioning

confidence: 99%

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A simple microcomputer-based modulated photocurrent spectroscopy system for the measurement of localized-state distributions in amorphous semiconductors

Naito

Iwai

Okuda

1991

Meas. Sci. Technol.

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The construction of a simple microcomputer-based modulated photocurrent spectroscopy (MPS) system is described for the determination of localized-state distribution in amorphous semiconductors. The laborious and timeconsuming measurement with a conventional set-up is avoided by the novel use of the combination of a simple and inexpensive computercontrolled pulse generator and a light-emitting diode. Data of localized-state distributions obtained with this system are presented for a prototypical amorphous chalcogenide semiconductor, amorphous As,Se,. The thermally created defect states are found in the material for the first time, and the defect creation energy is estimated to be 0.64 eV.

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Section: Discussionsupporting

confidence: 89%

Section: Discussionsupporting

confidence: 84%

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A simple microcomputer-based modulated photocurrent spectroscopy system for the measurement of localized-state distributions in amorphous semiconductors

Naito

Iwai

Okuda

1991

Meas. Sci. Technol.

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“…For g-As 2 S 3 Kawazoe et al [16] have reported resonance enhancement of Raman peaks sterming from As-As and S-S homopolar bonds, which are assumed to provide band tail states of the valence band.…”

Section: Resultsmentioning

confidence: 99%

Investigation of nanophase separation in IR optical glasses As40Se60 using resonant Raman scattering

Mateleshko¹

2004

Semicond. Phys. Quantum Electron. Optoelectron.

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Resonant Raman spectra of stoichiometric glass (g) gAs 40 Se 60 have been investigated. It was observed that the increasing of excitation radiation energy hν > E 0 (E 0 is pseudogap width) changes a shape, intensity, and position of Raman peaks of gAs 40 Se 60. The structure and vibration spectra of some As-Se clusters were calculated applying the ab initio method. In order to elucidate structural features of gAs 40 Se 60 , we combined the experimental Raman data and theoretical calculations.

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“…As mentioned above, the structural and electronic properties of the liquid As 2 Se 3 and As 2 Te 3 have been already studied both experimentally and theoretically. On the other hand, few papers were reported for the liquid state of As 2 S 3 mixture, 13,14) while its glass state has been elaborately investigated so far. [15][16][17][18][19] Kawazoe et al 13) measured the ESR spectra of the liquid As 2 S 3 to examine the nature of defects.…”

Section: Introductionmentioning

confidence: 98%

Structural and Electronic Properties of Liquid Arsenic Sulfide at High Temperatures:Ab InitioMolecular-Dynamics Simulations

2005

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The temperature dependences of the structural and electronic properties of liquid As 2 S 3 are investigated by means of ab initio molecular-dynamics simulations. It is shown that the threedimensional network structure is transformed into a two-fold chain-like structure with increasing temperature, as was seen in the liquid As 2 Se 3 . We discuss the microscopic mechanism of the charge transfer from sulfur to arsenic atoms accompanied with the semiconductor-metal transition in these liquid mixtures.

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Imperfections in amorphous chalcogenides. I. Electrically neutral defects in liquid sulfur and arsenic sulfides

Cited by 20 publications

References 19 publications

A simple microcomputer-based modulated photocurrent spectroscopy system for the measurement of localized-state distributions in amorphous semiconductors

A simple microcomputer-based modulated photocurrent spectroscopy system for the measurement of localized-state distributions in amorphous semiconductors

Investigation of nanophase separation in IR optical glasses As40Se60 using resonant Raman scattering

Structural and Electronic Properties of Liquid Arsenic Sulfide at High Temperatures:Ab InitioMolecular-Dynamics Simulations

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