Impedancemetry of Ag-=SUB=-2-=/SUB=-S nanocrystallites embedded in nanoporous glasses

A.V., Ilinskiy; R.A., Castro; M.E., Pashkevich; I.O., Popova; A.I., Sidorov; E.B., Shadrin

doi:10.21883/pss.2022.14.54347.176

Cited by 4 publications

(9 citation statements)

References 7 publications

(7 reference statements)

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“…Mg impurity in VO 2 film crystallites is an electrons donor [24]. According to our measurements (Fig.…”

Section: Doping Of Vo 2 Film With Mg Ionssupporting

confidence: 58%

“…Therefore, doping with Mg increases the average material density and results in increase of refraction index n 0 [28]. At the same time, Mg 2+ ion in VO 2 has poorly expressed donor properties [24], resulting in growth of extinction coefficient in VO 2 : Mg film, that we observed experimentally (Fig. 2).…”

Section: Doping Of Vo 2 Film With Mg Ionssupporting

confidence: 55%

“…This happens due to Coulomb transformation of FDoS conductivity band, caused by reduction of free electrons concentration. At the same time, the dielectric spectra of VO 2 : Ge film [24] indicate increase of temperature T C of phase transition and, thus, expansion of the forbidden band (not narrowing, as for VO 2 : Mg). Such expansion is caused by acceptor properties of Ge impurity.…”

Section: Doping Of Vo 2 Films With Ge Ionsmentioning

confidence: 85%

“…Ge ions have not donor, but acceptor properties [24]. Doping with Ge should, as opposed to VO 2 : Mg, move the value of " zero' point of n(λ) (dotted line) towards lower energy.…”

Section: Doping Of Vo 2 Films With Ge Ionsmentioning

confidence: 99%

“…Unusualness of the results appears due to presence of strong interelectronic correlations in vanadium oxides. Novelty of the obtained data is related to usage of high-information modern study methods: photonic crystals spectroscopy with VO 2 -filling [5], pico-and femtosecond spectroscopy [6], near-field optical microscopy along with atomic force microscopy [7][8][9], as well as EXAFS methods [10].…”

Section: Introductionmentioning

confidence: 99%

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Ellipsometric characterization of VO-=SUB=-2-=/SUB=-, VO-=SUB=-2-=/SUB=- : Mg, VO-=SUB=-2-=/SUB=- : Ge nanocrystalline films

R.A.

A.V.

L.M.

et al. 2022

Physics of the Solid State

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The spectra of the refractive index n(λ) and the extinction coefficient k(λ) of thin VO2, VO2 : Mg, VO2 : Ge films were measured using the ellipsometric method. For an undoped VO2 film at a wavelength λ=632.8 nm, near the insulator-metal phase transition, the n(T) and k(T) thermal hysteresis loops were studied. An interpretation of the results is given on the base of the Moss relation, the idea of a change in n(T) and k(T) with an impurity variation of the material density, and also on the base of the ideology of the Coulomb transformation of the density of states function in strongly correlated materials. Keywords: ellipsometry, vanadium dioxide, insulator-metal phase transition, strongly correlated materials.

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“…Mg impurity in VO 2 film crystallites is an electrons donor [24]. According to our measurements (Fig.…”

Section: Doping Of Vo 2 Film With Mg Ionssupporting

confidence: 58%

Section: Doping Of Vo 2 Film With Mg Ionssupporting

confidence: 55%

Section: Doping Of Vo 2 Films With Ge Ionsmentioning

confidence: 85%

“…Ge ions have not donor, but acceptor properties [24]. Doping with Ge should, as opposed to VO 2 : Mg, move the value of " zero' point of n(λ) (dotted line) towards lower energy.…”

Section: Doping Of Vo 2 Films With Ge Ionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ellipsometric characterization of VO-=SUB=-2-=/SUB=-, VO-=SUB=-2-=/SUB=- : Mg, VO-=SUB=-2-=/SUB=- : Ge nanocrystalline films

R.A.

A.V.

L.M.

et al. 2022

Physics of the Solid State

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Dielectric Measurements of Nanocrystalline VO-=SUB=-2-=/SUB=- : Fe Films

Ilinskiy

Castro

Klimov

et al. 2022

Optics and Spectroscopy

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Dielectric spectroscopy methods revealed the existence of two types of relaxation processes in the semiconductor phase of VO2 : Fe films. The characteristic relaxation times are denoted by tau1 and tau2. It is shown that the temperature dependences of tau1 and tau2 have hysteresis, the position of the loops of which coincides with the points of the semiconductor-metal phase transition. in VO2 : Fe films. tau1 corresponds to undoped, and tau2 corresponds to Fe-doped nanocrystallites of the VO2 film. It is shown that the physical mechanism of the relaxation process is due to the establishment of equilibrium after the action of an electric field on conduction electrons. The numerical values of the parameters of the distribution of relaxers over relaxation times are determined. Keywords: dielectric measurements, correlation effects, vanadium dioxide, VO2, insulator-metal phase transition

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Semiconductor-metal phase transition in oxides of Magneli series: VO and V-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

Ilinskiy

Shadrin

2022

Physics of the Solid State

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A comparative analysis of the physical parameters of strongly correlated oxides VO and V2O3 has been carried out. It has been established that the semiconductor--metal phase transition in both VO and V2O3 has a complex Mott-Peierls character. Namely, as the temperature increases in both oxides, before the Peierls abrupt structural phase transition, the Mott phase transition, which is extended in temperature, take place. It has been discussed the reason for the fact that, despite the stabilization of the semiconductor phase by high-strength π-dimers or sigma-dimers, the temperatures of phase transitions are low (Tc=126 K (VO) and Tc=140 K (V2O3)). Keywords: Magnelis series, phase transformations, electron-electron correlations.

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Impedancemetry of Ag-=SUB=-2-=/SUB=-S nanocrystallites embedded in nanoporous glasses

Cited by 4 publications

References 7 publications

Ellipsometric characterization of VO-=SUB=-2-=/SUB=-, VO-=SUB=-2-=/SUB=- : Mg, VO-=SUB=-2-=/SUB=- : Ge nanocrystalline films

Ellipsometric characterization of VO-=SUB=-2-=/SUB=-, VO-=SUB=-2-=/SUB=- : Mg, VO-=SUB=-2-=/SUB=- : Ge nanocrystalline films

Dielectric Measurements of Nanocrystalline VO-=SUB=-2-=/SUB=- : Fe Films

Semiconductor-metal phase transition in oxides of Magneli series: VO and V-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

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