Impedance spectroscopy study of BNKLT polycrystalline ceramic

Rajulu, K. Ch. Varada; Tilak, B.; Rao, K. Sambasiva

doi:10.1007/s00339-011-6631-6

Cited by 27 publications

(5 citation statements)

References 27 publications

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“…Such dependence is in accordance with the previously established increase in alternate current (AC) conductivity and can be assigned to a negative temperature coefficient of the resistance [30]. Further, the impedance curves that merge at high frequencies show the independence of the measured parameter on temperature in this region, illuminating the conduction mechanism due to the short-range movement of charge carriers [31]. It is known that grain boundaries are active interfaces for the creation of such region [32].…”

Section: Impedances Analysissupporting

confidence: 87%

Impedance and Dielectric Analysis of Nickel Ferrites: Revealing the Role of the Constant Phase Element and Yttrium Doping

Šiljegović,

Cvejić,

Jankov

et al. 2024

Electronics

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This paper presents the analysis of electrical and dielectric properties of the yttrium-doped nickel ferrite nano-powders synthesized using the co-precipitation method. Impedance and dielectric measurements have been carried out as a function of frequency at different temperatures from 200 to 25 °C in the range of 0.1 kHz–1 MHz. In order to investigate the conduction mechanism and highlight the role of yttrium doping in different concentrations, impedance spectroscopy was employed. The obtained data were analyzed in terms of equivalent circuits made of resistor and capacitor components describing the contributions from different electrical active regions in a material. Further, this study highlights the importance of a single constant phase element (CPE) in the description of dispersion behavior of the impedance response of the investigated samples in the given frequency range. The use of this technique enabled the characterization of grain and grain boundaries contribution in overall conductivity mechanism. The dielectric dispersion nature of all investigated materials is reflected in this study. Very high values of the real part of permittivity at low frequencies are assigned to space-charge polarization. The dependence of the real part of dielectric permittivity values of the yttrium content was also discussed. Doping with yttrium in different concentrations that reflects in different electric and dielectric responses is concluded in this study. The greatest change is noticed for the sample with the minimum dopant content for a x = 0.05 atomic percent share of yttrium. To reveal the potential role of more than one ion contribution to the overall relaxation process in investigated compounds, a modified Debye’s equation was utilized.

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Section: Impedances Analysissupporting

confidence: 87%

Impedance and Dielectric Analysis of Nickel Ferrites: Revealing the Role of the Constant Phase Element and Yttrium Doping

Šiljegović,

Cvejić,

Jankov

et al. 2024

Electronics

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“…The decrease in Z′ with the frequency, which eventually tended to merge to a common line at higher frequencies, suggests attenuated space charge polarization at higher frequencies. [ 43,44 ] Moreover, Z′ in the low‐frequency region decreased with an increase in temperature, showing a semiconductor‐like behavior in HfO x thin films on account of V O generation in the lattice. Figure 8d presents the frequency‐dependent Z″ plot at LRS under various temperatures.…”

Section: Resultsmentioning

confidence: 99%

Dielectric Properties and Carrier Transport Mechanism in Annealed HfO_x‐Based Resistive Random Access Memory Devices

Bai,

Xie,

et al. 2024

Physica Status Solidi (a)

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The diversity of the carrier transport mechanism in the resistive switching process remains a significant obstacle for the design and application of resistive random access memory (RRAM) devices. In this study, the influence of annealing on the dielectric properties of the Ti/HfOx/Pt RRAM device and its associated carrier transport mechanism is investigated. The results reveal that the current conduction in both annealed and unannealed devices is primarily attributed to grain boundary (GB) relaxation, with only the GB acting as a depletion layer that induces dielectric relaxation. Furthermore, annealing decreases the interfacial polarization and changes the relaxation time at the GB. In addition, the charge carriers exhibit nearest‐neighbor hopping conduction at a higher temperature in Ti/HfOx/Pt RRAM devices, whereas variable‐range‐hopping conduction occurs at lower temperatures. Long‐range charge carrier transport also plays a significant role in the conduction process. To offer a deeper understanding of the conduction processes in the Ti/HfOx/Pt RRAM device, a carrier transport model is proposed, which provides valuable insights into the intricate mechanisms governing conduction in these devices.

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“…The electrical conductivity studies indicate the nature of charge species involved in the conduction on application of electric field. Impedance spectroscopy has appliedsuccessfully in the investigation of ferroelectric materials [5]. The dielectric constant obtained from ac data would be unambiguous and would have a better physical significance than those obtained from capacitance measurements at chosen fixed frequencies.…”

Section: Introductionmentioning

confidence: 99%

“…Since it was discovered by smolenskii et al in 1961 [1], (Bi 0.5 Na 0.5 )TiO 3 (BNT) has attracted much attention due to its good ferroelectricity. Its piezoelectric and electromechanical properties were greatly enhanced by forming solid solutions with potassium (K), Barium (Ba) and Lithium (Li) kind of dopants [2][3][4][5]. [Bi 0.5 (Na 1-x-y K x Li y ) 0.5 ]TiO 3 is considered to be a new kind of material for lead-free piezoelectric and many efforts have been made to investigate the fabrication of high-performance piezoelectric with BNT [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…Its piezoelectric and electromechanical properties were greatly enhanced by forming solid solutions with potassium (K), Barium (Ba) and Lithium (Li) kind of dopants [2][3][4][5]. [Bi 0.5 (Na 1-x-y K x Li y ) 0.5 ]TiO 3 is considered to be a new kind of material for lead-free piezoelectric and many efforts have been made to investigate the fabrication of high-performance piezoelectric with BNT [5][6][7]. Literature survey revealed that there is no previous research on conductivity, dielectric relaxation properties of BNKLT ceramic materials.…”

Section: Introductionmentioning

confidence: 99%

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Electricalconductivity and Dielectric Properties of Bi0.5(Na0.7K0.2Li0.1)0.5TiO3 Ceramic Material

Rajulu¹,

Tilak²,

Rao³

2012

MATERIALS

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Solid state reaction route is used by adopting calcination, dry pressing and sintering for the preparation of polycrystalline Bi 0.5 (Na 0.7 K 0.2 Li 0.1 ) 0.5 TiO 3 (BNKLT) material. Studies of dielectric and conductivity parameters of the material were studied as a function of frequency(45Hz to 5MHz) and temperature(RT-600℃). At higher temperatures the conductivity curves were found to be merging, due to the effect of release of space charge.The conductivity parameters such as ion-hopping rate (ω p ), fitting parameters (n(T), A(T)) and the charge carrier concentration(K ' ) terms have been calculated using Almond and West formalism.A strong dispersion in both the components of complex dielectric constant, appear to be a common feature in ferroelectrics associated with good ionic conductivity and is referred to as the low frequency dielectric dispersion(LFDD).This offered an opportunity to obtain a good candidate for replacing the lead based ceramics.

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Impedance spectroscopy study of BNKLT polycrystalline ceramic

Cited by 27 publications

References 27 publications

Impedance and Dielectric Analysis of Nickel Ferrites: Revealing the Role of the Constant Phase Element and Yttrium Doping

Impedance and Dielectric Analysis of Nickel Ferrites: Revealing the Role of the Constant Phase Element and Yttrium Doping

Dielectric Properties and Carrier Transport Mechanism in Annealed HfO_x‐Based Resistive Random Access Memory Devices

Electricalconductivity and Dielectric Properties of Bi<SUB>0.5</SUB>(Na<SUB>0.7</SUB>K<SUB>0.2</SUB>Li<SUB>0.1</SUB>)<SUB>0.5</SUB>TiO<SUB>3</SUB><SUB> </SUB>Ceramic Material

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Impedance spectroscopy study of BNKLT polycrystalline ceramic

Cited by 27 publications

References 27 publications

Impedance and Dielectric Analysis of Nickel Ferrites: Revealing the Role of the Constant Phase Element and Yttrium Doping

Impedance and Dielectric Analysis of Nickel Ferrites: Revealing the Role of the Constant Phase Element and Yttrium Doping

Dielectric Properties and Carrier Transport Mechanism in Annealed HfOx‐Based Resistive Random Access Memory Devices

Electricalconductivity and Dielectric Properties of Bi<SUB>0.5</SUB>(Na<SUB>0.7</SUB>K<SUB>0.2</SUB>Li<SUB>0.1</SUB>)<SUB>0.5</SUB>TiO<SUB>3</SUB><SUB> </SUB>Ceramic Material

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Dielectric Properties and Carrier Transport Mechanism in Annealed HfO_x‐Based Resistive Random Access Memory Devices