Impedance spectroscopic investigation on electrical conduction and relaxation in manganese substituted pyrochlore type semiconducting oxides

Sumi, S.; Rao, P. Prabhakar; Koshy, Peter

doi:10.1016/j.ceramint.2015.01.038

Cited by 20 publications

(4 citation statements)

References 19 publications

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“…9 shows double peaks, representing both grain and grain boundary contribution in conduction. 54 This is not the usual nature of oxide ion conducting materials. 55,56 It can be intuited for the combined effect of short-range and long-range relaxation mechanisms in the sample.…”

Section: Impedance Spectroscopymentioning

confidence: 99%

Impedance Spectroscopic Studies of B2O3-Substituted CeO2-Gd2O3 Systems

Priya

Sandhya

Rajendran

2020

Journal of Elec Materi

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In this paper, the change in the conduction mechanism due to B 2 O 3 addition in a ceria-based nanoceramic system is understood by studying the nature of conductivity and the variation of electric modulus function with frequency at different temperatures. The studies revealed that oxide ion conduction in the prepared system is prominent only after 500°C. The activation energy for electrical conduction and oxide ion hopping in the system is found to be 0.26 eV and 0.85 eV, respectively. The discrepancy in the values of the activation energies itself is evidence of a different mechanism other than oxide ion hopping occurring in the present sample. The electric modulus function shows two relaxation peaks at lower temperatures corresponding to short-range and long-range relaxation for the charge carriers. Relaxation energies for the processes are found to be 0.27 eV and 0.95 eV. This is evidence of the occurrence of Maxwell-Wagner relaxation phenomena in the ceramic system. Explicitly, thermally activated oxide ion migration, along with the relaxation of electrons at the site of the bound pair (B-V o) AE is observed in the prepared nanocrystalline system.

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Section: Impedance Spectroscopymentioning

confidence: 99%

Impedance Spectroscopic Studies of B2O3-Substituted CeO2-Gd2O3 Systems

Priya

Sandhya

Rajendran

2020

Journal of Elec Materi

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“…The widening of the peak at higher temperatures indicates the existence of temperature-dependent relaxation. The substances causing relaxation of the material at high temperature may be vacancies or defects [ 42 ].…”

Section: Resultsmentioning

confidence: 99%

“…The substances causing relaxation of the material at high temperature may be vacancies or defects [42]. The Nyquist plot (Z″ vs. Z′) from 200 to 650 °C is shown in Figure 5c.…”

Section: Electrical Impedance Spectroscopy Of Ceramicsmentioning

confidence: 99%

Microstructures and Electrical Conduction Behaviors of Gd/Cr Codoped Bi3TiNbO9 Aurivillius Phase Ceramic

Zhou

Wang

et al. 2021

Materials

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In this work, a kind of Gd/Cr codoped Bi3TiNbO9 Aurivillius phase ceramic with the formula of Bi2.8Gd0.2TiNbO9 + 0.2 wt% Cr2O3 (abbreviated as BGTN−0.2Cr) was prepared by a conventional solid-state reaction route. Microstructures and electrical conduction behaviors of the ceramic were investigated. XRD and SEM detection found that the BGTN−0.2Cr ceramic was crystallized in a pure Bi3TiNbO9 phase and composed of plate-like grains. A uniform element distribution involving Bi, Gd, Ti, Nb, Cr, and O was identified in the ceramic by EDS. Because of the frequency dependence of the conductivity between 300 and 650 °C, the electrical conduction mechanisms of the BGTN−0.2Cr ceramic were attributed to the jump of the charge carriers. Based on the correlated barrier hopping (CBH) model, the maximum barrier height WM, dc conduction activation energy Ec, and hopping conduction activation energy Ep were calculated with values of 0.63 eV, 1.09 eV, and 0.73 eV, respectively. Impedance spectrum analysis revealed that the contribution of grains to the conductance increased with rise in temperature; at high temperatures, the conductance behavior of grains deviated from the Debye relaxation model more than that of grain boundaries. Calculation of electrical modulus further suggested that the degree of interaction between charge carriers β tended to grow larger with rising temperature. In view of the approximate relaxation activation energy (~1 eV) calculated from Z’’ and M’’ peaks, the dielectric relaxation process of the BGTN−0.2Cr ceramic was suggested to be dominated by the thermally activated motion of oxygen vacancies as defect charge carriers. Finally, a high piezoelectricity of d33 = 18 pC/N as well as a high resistivity of ρdc = 1.52 × 105 Ω cm at 600 °C provided the BGTN−0.2Cr ceramic with promising applications in the piezoelectric sensors with operating temperature above 600 °C.

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“…Востребованность метода импедансной спектроскопии в последние десятилетия возросла в связи с возросшим уровнем технического и программного обеспечения метода, что позволило сократить временные затраты на получение и обработку экспериментальных данных. За счет проведения измерений на переменном токе импедансная спектроскопия позволяет исследовать механизмы переноса заряда как на фазовой границе раздела двух сред, так и в объеме пленки, выявить происходящие на поверхности полупроводника физико-химические процессы, а за счет варьирования в широком диапазоне частот переменного сигнала наблюдать процессы, протекающие с разными скоростями [13][14][15][16][17][18][19][20].…”

Section: Introductionunclassified

Исследование импедансных характеристик наноструктурного ZnO<La> сенсора паров перекиси водорода

Шахназарян¹,

Шахатуни²,

Алексанян³

et al. 2022

Physics

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Изготовлен наноструктурный сенсор для обнаружения паров перекиси водорода. Газочувствительная пленка сенсора на основе легированного 2 ат.% La металлоксида ZnO получена методом высокочастотного магнетронного распыле- ния. В области температур от комнатной до 200С исследованы импедансные и вольт-амперные характеристики ZnO<La> сенсора как до, так и после воздействия паров перекиси водорода. На основе анализа частотных характеристик ком- плексного импеданса предложена эквивалентная электрическая цепь для исследуемой сенсорной структуры, оценены параметры составляющих ее элементов и рассчитаны аппроксимирующие кривые. Показано, что основной вклад в чувствительность изготовленного сенсора дают процессы, протекающие на поверхности полупроводниковой пленки. Исследовано влияние изменения концентрации целевого газа на чувствительность ZnO<La> сенсора.

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Impedance spectroscopic investigation on electrical conduction and relaxation in manganese substituted pyrochlore type semiconducting oxides

Cited by 20 publications

References 19 publications

Impedance Spectroscopic Studies of B2O3-Substituted CeO2-Gd2O3 Systems

Impedance Spectroscopic Studies of B2O3-Substituted CeO2-Gd2O3 Systems

Microstructures and Electrical Conduction Behaviors of Gd/Cr Codoped Bi3TiNbO9 Aurivillius Phase Ceramic

Исследование импедансных характеристик наноструктурного ZnO<La> сенсора паров перекиси водорода

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