Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride

Войцеховский, А. В.; Nesmelov, S. N.; Dzyadukh, S. М.; Dvoretsky, S. A.; Михайлов, Н. Н.; Sidorov, G. Yu.; Yakushev, M. V.

doi:10.1007/s11182-020-02117-0

Cited by 5 publications

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References 32 publications

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“…In particular, in [27][28][29][30] the study of the metal-dielectric-semiconductor structure based on MBE nBn n-HgCdTe by the method of admittance spectroscopy was carried out.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

et al. 2023

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This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). Seven different types of photosensitive structures for middle wavelength (MWIR) and long wavelength (LWIR) infrared (IR) radiation ranges grown by molecular beam epitaxy (MBE) have been studied by complex conductivity spectroscopy method. The current-voltage characteristics (CVC) were measured both in the dark and in the presence of illumination. Based on the measured dependences of the dark current density on temperature and the ratio of the perimeter to the area of the structure, the dominant contribution of the bulk current component compared to the surface component for the MWIR structure (x ~ 0.30) was established. This fact was confirmed by the value of the activation energy (from the Arrhenius plots) corresponding to the band gap. The results of frequency measurements of the differential conductivity of MIS structures based on NBνN also give a close activation energy, which corresponds to the diffusion limitation. LWIR structures (x ~ 0.20) are characterized by an increase in the contribution of the surface leakage current in the total dark current. In this case, the activation energy determined from MIS measurements exceeds the band gap of the ν-layer, which is associated with the presence of an energy barrier for holes in the valence band. It is shown that if the problem of passivation of mesa structures is solved, it is possible to fabricate efficient MWIR and LWIR nBn, NBνN detectors based on MBE HgCdTe with high threshold parameters.

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“…In particular, in [27][28][29][30] the study of the metal-dielectric-semiconductor structure based on MBE nBn n-HgCdTe by the method of admittance spectroscopy was carried out.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

et al. 2023

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“…The creation of efficient nBn detectors with parameters providing the maximum detectivity requires detailed studies of the electrical properties of unipolar multilayer HgCdTe systems. One of the methods for studying the electrical properties of various layers in nBn systems is to measure the admittance of such systems [9,10] or metalinsulator-semiconductor (MIS) structures on their basis [11,12]. The aim of this work is to study in a wide range of conditions the admittance of MIS structures based on an nBn system from MBE HgCdTe with layer parameters close to optimal for creating efficient MWIR detectors.…”

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confidence: 99%

“…In different rows of the array of nBn elements, the forward field electrodes had different diameters (from 130 to 480 μm). A photograph of a similar array of nBn elements is given, e.g., [12]. The rows are numbered from the MIS structures with the largest diameter of the field electrode towards a decrease in the electrode diameters.…”

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confidence: 99%

“…In this circuit, R d and C d are the resistance and capacitance of the dielectric layer and R b and C b are the resistance and capacitance of the barrier layer. The total EC should also include series resistance of the bulk of the absorbing layer R bulk [11,12], but, for the sample under study, the presence of this resistance can be neglected in a wide range of conditions (due to the small nominal value of this resistance). The lines in Fig.…”

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confidence: 99%

“…It is seen that the slope of the dependence is very small, since the resistance of the barrier layer is determined by the bulk component of the dark current. Surface leakage does not affect this dependence, since the width of the space charge region is much smaller than the distance from the edges of the field electrode to the side walls of the mesa structure [12].…”

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confidence: 99%

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Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range

et al. 2021

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The admittance of test MIS structures based on nBn systems from Hg 1 -x Cd x Te grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier layer, it is 0.60. An equivalent circuit of an MIS-structure based on an nBn system is proposed and the nominal values of the elements of this circuit are found under various conditions. Comparison of the temperature dependence of the barrier resistance with the Rule07 model indicates the possibility of creating efficient nBn detectors based on HgCdTe grown by molecular beam epitaxy for the 3-to 5-μm spectral range.

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II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays

Войцеховский

Nesmelov

Dzyadukh

et al. 2023

Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

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Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride

Cited by 5 publications

References 32 publications

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra

Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range

II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays

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