Impedance model of electrolyte–insulator–semiconductor structure with porous silicon semiconductor

Betty, C.A.; Lal, R.; Yakhmi, J. V.

doi:10.1016/j.electacta.2009.01.071

Cited by 16 publications

(7 citation statements)

References 32 publications

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“…for high Re(Z) values) the semicircle amplitude dramatically These results are in good agreement with presented in Ref. [11,13]. Figure 4a shows an improvement in the impedance of the Au/PS/Au structure when the voltage increases, which tends to be more ideal due to the improvement in the phase behavior and in the dielectric response [10].…”

Section: Resultssupporting

confidence: 92%

“…This characterization technique permits to separate the dielectric permittivity properties corresponding to the capacitance present in the relaxation region in the porous silicon layers [9,10]. The AC dielectric analysis is interpreted in terms of the admittance or impedance measurement and the equivalent electrical circuits are formed by RC networks in parallel [10,11], connected in series with an inductance or capacitance [8,12,13].…”

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confidence: 99%

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Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p‐Si structures

Fonthal

Chavarria

2010

Phys. Status Solidi C

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– The AC electrical characterization of Au/porous silicon/p‐Si structure is presented. The low porosity porous silicon layers were prepared by electrochemical etching in p‐type silicon 〈100〉 with two resistivities. The AC electrical measurements capacitance–conductance–frequency were performed from 5 Hz to 10 MHz, at room temperature in the DC range of ±2 V. We studied two structures; first a conductor type Au/PS/Au and second diode type Au/PS/p‐Si/Al. We found the relationship between the bias voltage in the PS/p‐Si heterostructures with the depletion region formation and the conduction mechanism presents in these structures. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 92%

mentioning

confidence: 99%

Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p‐Si structures

Fonthal

Chavarria

2010

Phys. Status Solidi C

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“…Porous silicon was fabricated by electrochemical etching, details of which are as described in refs. 29–30, using p‐type single crystalline Si wafer of (111) orientation and resistivity 1–2 ohm cm. As‐prepared porous silicon was characterized using a scanning electron microscope (SEM), Vega MV2300T/40 (TS 5130 MM, TESCAN).…”

Section: Methodsmentioning

confidence: 99%

“…Details of nanocrystalline TiO 2 preparation are described in refs. 29, 31. Titanium oxynitride was prepared by heating the TiO 2 powder for 4 h at different temperatures including 600, 700 and 850 °C (referred to as TiON600, TiON700 & TiON850 respectively in the text) in pure ammonia gas flow (rate: 200 sccm).…”

Section: Methodsmentioning

confidence: 99%

Photoelectrochemical properties of porous silicon based novel photoelectrodes

Betty

Sasikala

Jayakumar

et al. 2011

Progress in Photovoltaics

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Porous silicon interfaces have been modified with nitrided TiO2 (TiON) nanoparticles to develop highly efficient photoelectrodes. Photoelectrodes were prepared by impregnating the electrochemically prepared porous silicon microchannels with titanium oxynitride. Photocatalytic measurements were carried out on titanium oxynitride particles in water‐methanol mixture and the results showed a dependence on the nitrogen concentration. Among the photoelectrodes used for photocurrent measurements, porous silicon impregnated with TiO2 nitrided at 600 °C showed maximum photocurrent increase after exposure to sunlight‐type radiation. The enhancement in photocurrent was one order more for the porous silicon/titanium oxynitride hetero‐structure than that of polished silicon/titanium oxynitride hetero‐structure. Photoelectrodes thus prepared were found to have stable performance for a period of six months. This observation promises the possibility of using porous silicon/titanium oxynitride hetero‐structures as efficient electrodes for photovoltaic cells. Copyright © 2010 John Wiley & Sons, Ltd.

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“…Measuring AC characterization allows separate permittivity dielectric properties corresponding to the capacitances present in the region of relaxation in the PS 4,[6][7][8] layers. This property measured in the frequency range is very important for different developments in biosensors based on PS, 9,10 which in recent years there have been several studies on electrical transduction mechanisms with different metal contacts.…”

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confidence: 99%

Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching

Chavarria

Fonthal

2016

ECS J. Solid State Sci. Technol.

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We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current – voltage I(V) and capacitance – voltage C(V) characteristics were used for the study of the electrical properties of this heterojunction. A deeper understanding of the physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found in the heterojunction important conduction mechanisms: the resonant tunnelling, SCLC and the dielectric relaxation due to the pores layers at high frequencies.

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Impedance model of electrolyte–insulator–semiconductor structure with porous silicon semiconductor

Cited by 16 publications

References 32 publications

Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p‐Si structures

Impedance spectra under forward and reverse bias conditions in gold/porous silicon/p‐Si structures

Photoelectrochemical properties of porous silicon based novel photoelectrodes

Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching

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